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参数资料
| 型号： | ADM00352 |
| 厂商： | Microchip Technology |
| 文件页数： | 3/38页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO FOR MCP16301 |
| 设计资源： | ADM00352 Bill of Materials ADM00352 Schematic |
| 特色产品： | MCP16301 Demo Boards |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 3.3V |
| 电流 - 输出： | 600mA |
| 输入电压： | 4 ~ 30 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 500kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | MCP16301 |
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MCP16301
1.0
ELECTRICAL
? Notice: Stresses above those listed under “Maximum
CHARACTERISTICS
Absolute Maximum Ratings ?
V IN, SW ............................................................... -0.5V to 40V
BOOST – GND ................................................... -0.5V to 46V
BOOST – SW Voltage........................................ -0.5V to 6.0V
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
V FB Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V IN + 0.3V)
Output Short Circuit Current ................................. Continuous
Power Dissipation ....................................... Internally Limited
Storage Temperature ................................... -65 ° C to +150 ° C
Ambient Temperature with Power Applied ..... -40 ° C to +85 ° C
Operating Junction Temperature.................. -40 ° C to +125 ° C
ESD Protection On All Pins:
HBM ................................................................. 3 kV
MM .................................................................200 V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T A = +25°C, V IN = V EN = 12V, V BOOST - V SW = 3.3V,
V OUT = 3.3V, I OUT = 100 mA, L = 15 μH, C OUT = C IN = 2 X 10 μF X7R Ceramic Capacitors
Boldface specifications apply over the T A range of -40 o C to +85 o C.
Parameters
Input Voltage
Feedback Voltage
Output Voltage Adjust Range
Feedback Voltage
Sym
V IN
V FB
V OUT
(Δ V FB /V FB )/ Δ V IN
Min
—
0.784
2.0
—
Typ
4.0
0.800
—
0.01
Max
30
0.816
15.0
0.1
Units
V
V
V
%/V
Conditions
V IN = 12V to 30V;
Line Regulation
Feedback Input Bias Current
I FB
-250
±10
+250
nA
Undervoltage Lockout Start
Undervoltage Lockout Stop
Undervoltage Lockout
UVLO STRT
UVLO STOP
UVLO HYS
—
2.4
—
3.5
3.0
0.4
4.0
—
—
V
V
V
V IN Rising
V IN Falling
Hysteresis
Switching Frequency
Maximum Duty Cycle
f SW
DC MAX
425
90
500
95
550
—
kHz
%
I OUT = 200 mA
V IN = 5V; V FB = 0.7V;
I OUT = 100 mA
Minimum Duty Cycle
DC MIN
—
1
—
%
NMOS Switch On Resistance
NMOS Switch Current Limit
Quiescent Current
Quiescent Current - Shutdown
Maximum Output Current
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-Start Time
R DS(ON)
I N(MAX)
I Q
I Q
I OUT
V IH
V IL
I ENLK
t SS
—
—
—
—
600
1.4
—
—
—
0.46
1.3
2
7
—
—
—
0.05
150
—
—
7.5
10
—
—
0.4
1.0
—
Ω
A
mA
μA
mA
V
V
μA
μS
V BOOST - V SW = 3.3V
V BOOST - V SW = 3.3V
V OUT = EN = 0V
V EN = 12V
EN Low to High,
90% of V OUT
Note 1:
2:
3:
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
For V IN < V OUT , V OUT will not remain in regulation.
V BOOST supply is derived from V OUT .
? 2011 Microchip Technology Inc.
DS25004A-page 3
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