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| 型号： | ADM690AN |
| 厂商： | Analog Devices Inc |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC SUPERVISOR MPU 4.65 WD 8DIP |
| 标准包装： | 50 |
| 类型： | 备用电池电路 |
| 监视电压数目： | 1 |
| 输出： | 推挽式，图腾柱 |
| 复位： | 低有效 |
| 复位超时： | 最小为 35 ms |
| 电压 - 阀值： | 4.65V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
ADM690–ADM695
PIN CONFIGURATIONS
V BATT 1
16 RESET
V OUT 2
ADM691
15 RESET
V 3
CC
GND 4
BATT ON 5
LOW LINE 6
ADM693
ADM695
TOP VIEW
(Not to Scale)
14 WDO
13 CE
IN
12 CE
OUT
11 WDI
V OUT
V
CC
GND
PFI
1
2
3
4
ADM690
ADM692
ADM694
TOP VIEW
(Not to Scale)
8
7
6
5
V BATT
RESET
WDI
PFO
OSC IN
7
10
PFO
OSC SEL 8
9
PFI
PRODUCT SELECTION GUIDE
Part
Number
ADM690
ADM691
ADM692
ADM693
ADM694
ADM695
Nominal Reset
Time
50 ms
50 ms or ADJ
50 ms
50 ms or ADJ
200 ms
200 ms or ADJ
Nominal V CC
Reset Threshold
4.65 V
4.65 V
4.4 V
4.4 V
4.65 V
4.65 V
Nominal Watchdog
Timeout Period
1.6 s
100 ms, 1.6 s, ADJ
1.6 s
100 ms, 1.6 s, ADJ
1.6 s
100 ms, 1.6 s, ADJ
Battery Backup
Switching
Yes
Yes
Yes
Yes
Yes
Yes
Base Drive
Ext PNP
No
Yes
No
Yes
No
Yes
Chip Enable
Signals
No
Yes
No
Yes
No
Yes
CIRCUIT INFORMATION
Battery Switchover Section
The battery switchover circuit compares V CC to the V BATT
input, and connects V OUT to whichever is higher. Switchover
occurs when V CC is 50 mV higher than V BATT as V CC falls, and
when V CC is 70 mV greater than V BATT as V CC rises. This
20 mV of hysteresis prevents repeated rapid switching if V CC
falls very slowly or remains nearly equal to the battery voltage.
Figure 1. Battery Switchover Schematic
During normal operation with V CC higher than V BATT , V CC is in-
ternally switched to V OUT via an internal PMOS transistor
switch. This switch has a typical on-resistance of 1.5 ? and can
supply up to 100 mA at the V OUT terminal. V OUT is normally
used to drive a RAM memory bank which may require instanta-
neous currents of greater than 100 mA. If this is the case then a
bypass capacitor should be connected to V OUT . The capacitor
will provide the peak current transients to the RAM. A capaci-
tance value of 0.1 μ F or greater may be used.
If the continuous output current requirement at V OUT exceeds
100 mA or if a lower V CC –V OUT voltage differential is desired,
an external PNP pass transistor may be connected in parallel
with the internal transistor. The BATT ON output (ADM691/
ADM693/ADM695) can directly drive the base of the external
transistor.
A 20 ? MOSFET switch connects the V BATT input to V OUT
during battery backup. This MOSFET has very low input-to-
output differential (dropout voltage) at the low current levels
required for battery back up of CMOS RAM or other low
power CMOS circuitry. The supply current in battery back up
is typically 0.6 μ A.
The ADM690/ADM691/ADM694/ADM695 operates with
battery voltages from 2.0 V to 4.25 V and the ADM692/ADM693
operates with battery voltages from 2.0 V to 4.0 V. High value
capacitors, either standard electrolytic or the farad size double
layer capacitors, can also be used for short-term memory back
up. A small charging current of typically 10 nA (0.1 μ A max)
flows out of the V BATT terminal. This current is useful for
maintaining rechargeable batteries in a fully charged condition.
This extends the life of the back up battery by compensating
for its self discharge current. Also note that this current poses
no problem when lithium batteries are used for back up since
the maximum charging current (0.1 μ A) is safe for even the
smallest lithium cells.
If the battery-switchover section is not used, V BATT should be
connected to GND and V OUT should be connected to V CC .
REV. A
–5 –
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相关代理商/技术参数 |
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| ADM690AQ | 制造商:AD 制造商全称:Analog Devices 功能描述:Microprocessor Supervisory Circuits |
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