参数资料
型号: ADP1871-BL1-EVZ
厂商: Analog Devices Inc
文件页数: 6/44页
文件大小: 0K
描述: EVAL BOARD FOR ADP1871
标准包装: 1
主要目的: DC/DC,步降
稳压器拓扑结构: 降压
板类型: 裸(未填充)
已供物品: 裸板
已用 IC / 零件: ADP1871

ADP1870/ADP1871
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Data Sheet
VIN 1
10
BST
COMP/EN 2
FB 3
GND 4
VREG 5
ADP1870/
ADP1871
TOP VIEW
(Not to Scale)
9
8
7
6
SW
DRVH
PGND
DRVL
NOTES
1. THE EXPOSED PAD MUST BE CONNECTED
TO GROUND.
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
8
9
10
Mnemonic
VIN
COMP/EN
FB
GND
VREG
DRVL
PGND
DRVH
SW
BST
Description
High Input Voltage. Connect VIN to the drain of the upper-side MOSFET.
Output of the Internal Error Amplifier/IC Enable. When this pin functions as EN, applying 0 V to this pin disables the IC.
Noninverting Input of the Internal Error Amplifier. This is the node where the feedback resistor is connected.
Analog Ground Reference Pin of the IC. All sensitive analog components should be connected to this ground
plane (see the Layout Considerations section).
Internal Regulator Supply Bias Voltage for the ADP1870/ADP1871 Controller (Includes the Output Gate Drivers).
A bypass capacitor of 1 μF directly from this pin to PGND and a 0.1 μF across VREG and GND are recommended.
VREG should not be loaded externally because it is intended to only bias internal circuitry.
Drive Output for the External Lower-Side, N-Channel MOSFET. This pin also serves as the current-sense gain
setting pin (see Figure 69).
Power GND. Ground for the lower-side gate driver and lower-side, N-channel MOSFET.
Drive Output for the External Upper-Side, N-Channel MOSFET.
Switch Node Connection.
Bootstrap for the Upper-Side MOSFET Gate Drive Circuitry. An internal boot rectifier (diode) is connected
between VREG and BST. A capacitor from BST to SW is required. An external Schottky diode can also be
connected between VREG and BST for increased gate drive capability.
Rev. B | Page 6 of 44
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