参数资料
型号: ADP220ACBZ-2827R7
厂商: Analog Devices Inc
文件页数: 5/20页
文件大小: 0K
描述: IC REG LDO 2.8V/2.7V .2A 6WLCSP
产品变化通告: 8mm Carrier Tape Changes 28/Feb/2012
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 2.8V,2.7V
输入电压: 2.5 V ~ 5.5 V
电压 - 压降(标准): 0.15V @ 200mA
稳压器数量: 2
电流 - 输出: 200mA(最小值)
电流 - 限制(最小): 240mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-WFBGA,WLCSP
供应商设备封装: 6-WLCSP(1.45x0.95)
包装: 标准包装
其它名称: ADP220ACBZ-2827R7DKR

Data Sheet
ABSOLUTE MAXIMUM RATINGS
ADP220/ADP221
Table 3.
Parameter
VIN to GND
VOUT1, VOUT2 to GND
EN1, EN2 to GND
Storage Temperature Range
Operating Junction Temperature Range
Soldering Conditions
Rating
–0.3 V to +6.5 V
–0.3 V to VIN
–0.3 V to +6.5 V
–65°C to +150°C
–40°C to +125°C
JEDEC J-STD-020
Junction-to-ambient thermal resistance (θ JA ) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent
on the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ JA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θ JA are based on a four-layer, 4 inch × 3 inch,
circuit board. Refer to JEDEC JESD 51-9 for detailed informa-
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP220/ADP221 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temper-
ature does not guarantee that the junction temperature (T J )
is within the specified temperature limits. In applications
with high power dissipation and poor thermal resistance, the
maximum ambient temperature may have to be derated. In
applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T J ) of
the device is dependent on the ambient temperature (T A ), the
power dissipation of the device (P D ), and the junction-to-ambient
thermal resistance of the package (θ JA ). Maximum junction
tion on the board construction. For additional information,
see the AN-617 Application Note, MicroCSP TM Wafer Level Chip
Scale Package .
Ψ JB is the junction-to-board thermal characterization parameter
with units of °C/W. Ψ JB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Package Thermal Information , states
that thermal characterization parameters are not the same as
thermal resistances. Ψ JB measures the component power flowing
through multiple thermal paths rather than a single path as in
thermal resistance, θ JB . Therefore, Ψ JB thermal paths include
convection from the top of the package as well as radiation
from the package. Factors that make Ψ JB more useful in real-
world applications. Maximum junction temperature (T J ) is
calculated from the board temperature (T B ) and power
dissipation (P D ) using the following formula:
T J = T B + ( P D × Ψ JB )
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information on Ψ JB .
THERMAL RESISTANCE
θ JA and Ψ JB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
temperature (T J ) is calculated from the ambient temperature
(T A ) and power dissipation (P D ) using the following formula:
T J = T A + ( P D × θ JA )
Table 4.
Package Type
6-Ball, 0.5 mm Pitch WLCSP
6-Ball Bumped Bare Die
θ JA
260
260
Ψ JB
43.8
43.8
Unit
°C/W
°C/W
ESD CAUTION
Rev. H | Page 5 of 20
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