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参数资料
| 型号： | ADP3121JRZ-RL |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 12V 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 35ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 35V |
| 电源电压： | 4.15 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
ADP3121
MAXIMUM RATINGS
Rating
q JA , SOIC_N
2 ? Layer Board
4 ? Layer Board
q JA , LFCSP_VD (Note 1)
4 ? Layer Board
Operating Ambient Temperature Range
Junction Temperature Range
Storage Temperature Range
Lead Temperature
Soldering (10 sec)
Vapor Phase (60 sec)
Infrared (15 sec)
Value
123
90
64.3
0 to 85
0 to 150
? 65 to +150
300
215
260
Unit
° C/W
° C/W
° C
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Internally limited by thermal shutdown, 150 ° C min. 2 ? layer board, 1 in 2 Cu, 1 oz thickness. 60 ? 180 seconds minimum above 237 ° C.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
ABSOLUTE MAXIMU M RATINGS (Note 2)
Pin Symbol
V CC
GND
BST
SW
DRVH
DRVL
IN
OD
Pin Name
Main supply voltage input
Ground
Bootstrap Supply Voltage Input
DC
<200 ns
BST to SW
Switching Node (Bootstrap Supply Return)
DC
<200 ns
High ? Side Driver Output
DC
<20 ns
<200 ns
Low ? Side Driver Output
DC
<20 ns
<200 ns
DRVH and DRVL Control Input
Outside Disable
V max
15 V
0V
V CC + 15
+35
+15
+15
+25 V
BST + 0.3 V
BST + 2.0 V
BST + 0.3 V
V CC + 0.3 V
V CC + 2.0 V
V CC + 0.3 V
6.5 V
6.5 V
V min
? 0.3 V
0V
? 0.3 V
? 5 V
? 10 V
SW ? 0.3 V
SW ? 2.0 V
SW ? 2.0 V
? 0.3 V
? 2.0 V
? 2.0 V
? 0.3 V
? 0.3 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. All voltages are with respect to PGND except where noted.
http://onsemi.com
3
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