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| 型号： | ADP3121JRZ-RL |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 12V 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 35ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 35V |
| 电源电压： | 4.15 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
ADP3121
ELECTRICAL CHARACTERISTIC S (V CC = 12 V, BST = 4.0 V to 26 V, T A = 0 ° C to 85 ° C, unless otherwise noted) (Note 1)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
SUPPLY
Supply Voltage Range
V CC
4.15
13.2
V
Supply Current
BST = 12 V, IN = 0 V
I SYS
2.0
5.0
mA
OD INPUTS
Input Voltage High
Input Voltage Low
2.0
0.8
V
V
Input Current
Hysteresis
? 1.0
90
250
+1.0
m A
mV
PWM INPUTS
Input Voltage High
Input Voltage Low
2.0
0.8
V
V
Input Current
Hysteresis
? 1.0
90
250
+1.0
m A
mV
HIGH ? SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Output Resistance, Unbiased
BST ? SW = 12 V; T A = 25 ° C
BST ? SW = 12 V; T A = 0 ° C to 85 ° C
BST – SW = 12 V; T A = 25 ° C
BST ? SW = 12 V; T A = 0 ° C to 85 ° C
BST – SW = 0 V
1.7
1.7
10
2.3
2.8
2.3
2.8
W
W
k W
Transition Times
BST – SW = 12 V, C LOAD = 3 nF,
see Figure 4
BST – SW = 12 V, C LOAD = 3 nF,
see Figure 4
t rDRVH
t fDRVH
20
20
32
30
ns
Propagation Delay Times
BST – SW = 12 V, C LOAD = 3 nF
25 ° C ≤ T A ≤ 85 ° C, see Figure 4
BST – SW = 12 V, C LOAD = 3 nF,
see Figure 4
See Figure 3
See Figure 3
t pdhDRVH
t pdlDRVH
t pdlOD
t pdhOD
20
30
32
30
20
50
47
45
40
ns
ns
SW Pull ? Down Resistance
SW to PGND
10
k W
LOW ? SIDE DRIVER
Output Resistance, Sourcing Current
Output Resistance, Sinking Current
Output Resistance, Unbiased
T A = 25 ° C
T A = 0 ° C to 85 ° C
T A = 25 ° C
T A = 0 ° C to 85 ° C
V CC = PGND
1.8
1.0
10
2.4
2.8
1.6
1.8
W
W
k W
Transition Times
C LOAD = 3 nF, see Figure 4
C LOAD = 3 nF, see Figure 4
t rDRVL
t fDRVL
20
10
30
20
ns
Propagation Delay Times
Timeout Delay
Overvoltage Protection Threshold
C LOAD = 3 nF, see Figure 4
C LOAD = 3 nF, see Figure 4
See Figure 3
See Figure 3
SW = 5.0 V
SW = PGND
IN = OD = 0 V, S W = V CC
t pdhDRVL
t pdlDRVL
t pdlOD
t pdhOD
V SW(OVD)
100
90
70
1.5
15
17
37
180
170
110
35
32
52
3.5
ns
ns
V
UNDERVOLTAGE LOCKOUT
UVLO Voltage
Hysteresis
V CC rising
1.5
250
3.0
V
mV
1. ALL limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods
http://onsemi.com
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