参数资料
型号: ADP667ARZ-REEL7
厂商: Analog Devices Inc
文件页数: 3/12页
文件大小: 0K
描述: IC REG LDO 5V/ADJ .25A 8SOIC
标准包装: 1
稳压器拓扑结构: 正,固定式或可调式
输出电压: 5V,1.3 V ~ 16 V
输入电压: 3.5 V ~ 16.5 V
电压 - 压降(标准): 0.15V @ 200mA
稳压器数量: 1
电流 - 输出: 250mA(最小值)
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
其它名称: ADP667ARZ-REEL7DKR

ADP667
PIN FUNCTION DESCRIPTION
Mnemonic Function
GENERAL INFORMATION
The ADP667 contains a micropower bandgap reference voltage
source, an error amplifier A1, two comparators (C1, C2) and a
DD
V IN
GND
LBI
LBO
SHDN
SET
OUT
Dropout Detector Output. PNP collector output
which sources current as dropout is reached.
Voltage Regulator Input.
Ground Pin. Must be connected to 0 V.
Low Battery Detect Input. Compared with 1.255 V.
Low Battery Detect Output. Open Drain Output
that goes low when LBI is below the threshold.
Digital Input. May be used to disable the device
so that the power consumption is minimized.
Voltage Setting Input. Connect to GND for +5 V
output or connect to resistive divider for adjust-
able output.
Regulated Output Voltage. Connect to filter
capacitor.
DIP & SOIC PIN CONFIGURATION
series PNP output pass transistor.
CIRCUIT DESCRIPTION
The internal bandgap voltage reference is trimmed to 1.255 V
and is used as a reference input to the error amplifier A1. The
feedback signal from the regulator output is supplied to the
other input by an on-chip voltage divider or by two external
resistors. When the SET input is at ground, the internal divider
provides the error amplifier’s feedback signal giving a +5 V out-
put. When SET is at more than 50 mV above ground, compara-
tor C1 switches the error amplifier’s input directly to the SET
pin, and external resistors are used to set the output voltage.
The external resistors are selected so that the desired output
voltage gives 1.255 V at the SET input.
The output from the error amplifier supplies base current to the
PNP output pass transistor which provides output current. Up
to 250 mA output current is available provided that the device
power dissipation is not exceeded.
Comparator C2 compares the voltage on the Low Battery Input,
LBI, pin to the internal +1.255 V reference voltage. The output
from the comparator drives an open drain FET connected to the
DD
1
8
IN
Low Battery Output pin, LBO. The Low Battery Threshold
OUT
LBI
GND
2
3
4
ADP667
TOP VIEW
(Not to Scale)
7
6
5
LBO
SET
SHDN
may be set using a suitable voltage divider connected to LBI.
When the voltage on LBI falls below 1.255 V, the open drain
output, LBO, is pulled low.
A shutdown (SHDN) input that can be used to disable the
error amplifier and hence the voltage output is also available.
The supply current in shutdown is less than 1 μ A.
TERMINOLOGY
Dropout Voltage: The input/output voltage differential at
which the regulator no longer maintains regulation against fur-
ther reductions in input voltage. It is measured when the output
decreases 100 mV from its nominal value. The nominal value is
the measured value with V IN = V OUT +2 V.
Line Regulation : The change in output voltage as a result of a
IN
SHDN
A1
ADP667
OUT
DD
change in the input voltage. It is specified for a change of input
voltage from 6 V to 10 V.
Load Regulation: The change in output voltage for a change
LBO
C2
C1
SET
in output current. It is specified for an output current change
from 10 mA to 200 mA.
Quiescent Current (I GND ): The input bias current which
LBI
GND
1.255V
REF
50mV
flows into the regulator not including load current. It is mea-
sured on the GND line and is specified in shutdown and also for
different values of load current.
Shutdown: The regulator is disabled and power consumption
is minimized.
Dropout Detector: An output that indicates that the regulator
is dropping out of regulation.
Maximum Power Dissipation: The maximum total device
dissipation for which the regulator will continue to operate
within specifications.
REV. A 0
–3 –
Figure 1. ADP667 Functional Block Diagram
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