参数资料
| 型号： | ADR434TRZ-EP |
| 厂商： | Analog Devices Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC VREF SRS PREC 4.096V 8-SOICN |
| 标准包装： | 1 |
| 系列： | XFET® |
| 基准类型： | 串联，精度 |
| 输出电压： | 4.096V |
| 容差： | ±0.04% |
| 温度系数： | 3ppm/°C |
| 输入电压： | 6.1 V ~ 18 V |
| 通道数： | 1 |
| 电流 - 静态： | 800µA |
| 电流 - 输出： | 10mA |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
Low Noise XFET Voltage References with
Current Sink and Source Capability
ADR431-EP/ADR434-EP/ADR435-EP
FEATURES
PIN CONFIGURATION
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 V OUT (ADR431-EP)
No external capacitor required
Low temperature coefficient
T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)
TP 1
V IN 2
NC 3
GND 4
ADR431-EP/
ADR434-EP/
ADR435-EP
TOP VIEW
(Not to Scale)
8
7
6
5
TP
COMP
V OUT
TRIM
T Grade: 5 ppm/°C maximum (ADR431-EP)
Load regulation: 15 ppm/mA
Line regulation: 20 ppm/V
Wide operating range: 4.5 V to 18 V (ADR431-EP)
High output source and sink current: +10 mA and ?10 mA
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC
standard)
Military temperature range (?55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Precision data acquisition systems
High resolution data converters
Optical control circuits
Precision instruments
GENERAL DESCRIPTION
The ADR431-EP/ADR434-EP/ADR435-EP are XFET? voltage
references featuring low noise, high accuracy, and low temperature
drift performance. Using Analog Devices, Inc., patented temperature
drift curvature correction and XFET (eXtra implanted junction
FET) technology, voltage change vs. temperature nonlinearity in
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.
The XFET references operate at lower current (800 μA) and
lower supply voltage headroom (2 V) than buried Zener
references. Buried Zener references require more than 5 V
headroom for operation. The ADR431-EP/ADR434-EP/
ADR435-EP XFET references are optimal low noise solutions
for 5 V systems.
NOTES
1. NC = NO CONNECT.
2. TP = TEST PIN (DO NOT CONNECT).
Figure 1. 8-Lead SOIC_N (R-8)
The ADR431-EP/ADR434-EP/ADR435-EP have the capability
to source up to 10 mA of output current and sink up to ?10 mA.
They also come with a trim terminal to adjust the output
voltage over a 0.5% range without compromising performance.
The ADR431-EP/ADR434-EP/ADR435-EP are available in an
8-lead narrow SOIC package and are specified over the military
temperature range of ?55°C to +125°C.
Additional application and technical information can be found
data sheet.
Table 1. Selection Guide
Output
Accuracy
Temperature
Model
ADR431T-EP
ADR434T-EP
ADR435T-EP
Voltage (V)
2.500
4.096
5.000
(mV)
±1.0
±1.5
±2.0
Coefficient (ppm/°C)
5
3
3
Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ?2010 Analog Devices, Inc. All rights reserved.
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