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参数资料
| 型号： | ADUC814BRUZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 24/72页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8K FLASH ADC/DAC 28-TSSOP |
| 标准包装： | 1,000 |
| 系列： | MicroConverter® ADuC8xx |
| 核心处理器： | 8052 |
| 芯体尺寸： | 8-位 |
| 速度： | 16.78MHz |
| 连通性： | I²C，SPI，UART/USART |
| 外围设备： | POR，PSM，温度传感器，WDT |
| 输入/输出数： | 17 |
| 程序存储器容量： | 8KB（8K x 8） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 640 x 8 |
| RAM 容量： | 256 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 6x12b; D/A 2x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 28-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 带卷 (TR) |
| 配用： | EVAL-ADUC814QSZ-ND - KIT DEV FOR ADUC814 MICROCONVRTR |
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ADuC814
Rev. A | Page 30 of 72
NONVOLITILE FLASH/EE MEMORY
FLASH/EE MEMORY OVERVIEW
The ADuC814 incorporates Flash/EE memory technology on-
chip to provide the user with nonvolatile, in-circuit reprogram-
mable code and data memory space.
Flash/EE memory takes the flexible in-circuit reprogrammable
features of EEPROM and combines them with the space efficient/
density features of EPROM (see Figure 32).
Because Flash/EE technology is based on a single transistor cell
architecture, a Flash memory array such as EPROM can be
implemented to achieve the space efficiencies or memory
densities required by a given design.
Like EEPROM, flash memory can be programmed in-system at
a byte level, although it must first be erased; the erase being
performed in page blocks. Thus, flash memory is often and
more correctly referred to as Flash/EE memory.
EEPROM
TECHNOLOGY
EPROM
TECHNOLOGY
FLASH/EE MEMORY
TECHNOLOGY
IN-CIRCUIT
REPROGRAMMABLE
SPACE EFFICIENT/
DENSITY
02748-A
-038
Figure 32. Flash/EE Memory Development
Incorporated in the ADuC814, Flash/EE memory technology
allows the user to update program code space in-circuit without
the need to replace one-time programmable (OTP) devices at
remote operating nodes.
FLASH/EE MEMORY AND THE ADUC814
The ADuC814 provides two arrays of Flash/EE memory for
user applications. There are 8 kbytes of Flash/EE program space
provided on-chip to facilitate code execution, therefore removing
the requirement for an external discrete ROM device. The pro-
gram memory can be programmed using conventional third-
party memory programmers. This array can also be programmed
in-circuit, using the serial download mode provided.
A 640-byte Flash/EE data memory space is also provided on-
chip. This may be used as a general-purpose nonvolatile
scratchpad area. User access to this area is via a group of six
SFRs. This space can be programmed at a byte level, although it
must first be erased in 4-byte pages.
ADUC814 FLASH/EE MEMORY RELIABILITY
The Flash/EE program and data memory arrays on the
ADuC814 are fully qualified for two key Flash/EE memory
characteristics: Flash/EE memory cycling endurance and
Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four
independent, sequential events:
1.
Initial page erase sequence
2.
Read/verify sequence
3.
Byte program sequence
4.
Second read/verify sequence
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 00H to FFH until a first
fail is recorded signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications tables, the ADuC814 Flash/EE
memory endurance qualification has been carried out in accor-
dance with JEDEC Specification A117 over the industrial
temperature range of –40°C to +125°C. The results allow the
specification of a minimum endurance figure over supply and a
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
Retention quantifies the ability of the Flash/EE memory to
retain its programmed data over time. Again, the ADuC814 has
been qualified in accordance with the formal JEDEC Retention
Lifetime Specification (A117) at a specific junction temperature
(TJ = 55°C). As part of this qualification procedure, the Flash/EE
memory is cycled to its specified endurance limit described
above, before data retention is characterized. This means that
the Flash/EE memory is guaranteed to retain its data for its full
specified retention lifetime every time the Flash/EE memory is
reprogrammed. It should be noted that retention lifetime, based
on an activation energy of 0.6 eV, derates with TJ as shown in
40
60
70
90
TJ JUNCTION TEMPERATURE (°C)
RE
TE
NTION
(Y
e
a
rs
)
250
200
150
100
50
0
50
80
110
300
100
ADI SPECIFICATION
100 YEARS MIN.
AT TJ = 55°C
02748-A
-039
Figure 33. Flash/EE Memory Data Retention
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