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参数资料
| 型号： | AF002C4-39 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 文件页数： | 1/4页 |
| 文件大小： | 43K |
| 代理商： | AF002C4-39 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 3/99A
GaAs IC Control FET Series
DC–2.5 GHz
AF002C1-39, AF002C4-39
Part Number1
Frequency2
RON (
))33
Insertion Loss (dB)4,5
COFF (pF)6
Isolation (db)5
P-1 dB (W)
(GHz)
Typ.
Max.
Series
Shunt
Typ.
Max.
Series
Shunt
Typ.
AF002C1-39
DC–0.5 GHz
6.4
9.0
0.50
0.10
0.13
0.25
25
12
0.5
DC–1.0 GHz
6.4
9.0
0.60
0.15
0.13
0.25
17
8
1.0
DC–2.5 GHz
6.4
9.0
0.70
0.20
0.13
0.25
13
3
1.0
AF002C4-39
DC–0.5 GHz
0.8
1.1
0.20
0.15
1.10
1.50
11
15
6
DC–1.0 GHz
0.8
1.1
0.25
1.10
1.50
6
9
10
DC–2.5 GHz
0.8
1.1
0.30
2.00
1.10
1.5
3
4
10
Electrical Specifications at 25°C (0, -5 V)
0.045
(1.14 mm)
0.035
(0.89 mm)
0.004 (0.10 mm)
0.0005 (0.01 mm)
0.027 (0.69 mm) REF.
0.007 (0.18 mm)
0.003 (0.08 mm)
0.120 (3.05 mm)
0.110 (2.79 mm)
0.104 (2.64 mm)
0.083 (2.10 mm)
0.055 (1.40 mm)
0.047 (1.19 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.018 (0.45 mm)
0.015 (0.38 mm)
3
1
2
0.040 (1.02 mm)
0.037 (0.94 mm)
Features
s Low Cost SOT-23 Package
s Series or Shunt Configuration
s Low DC Current Drain
s Ideal Switch Building Blocks
s Pin Diode Replacements
s High Power Antenna Switches
SOT-23
Description
This group of GaAs control FETs can be used in both
series and shunt configurations. They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 W.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
Parameter
Condition
Frequency
Min.
Typ.
Max.
Unit
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
6
ns
On, Off (50% CTL to 90/10% RF)
12
ns
Control Voltages
VLow = 0 to -0.2 V @ 20 A Max.
VHigh = -5 V @ 50 A to -9 V @ 200 A Max.
Operating Characteristics at 25°C (0, -5 V)
1. All measurements made in a 50
system, unless otherwise specified.
2. DC = 300 kHz.
3. RON - resistance in in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. COFF - capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AF002C4-39LF | 制造商:SKYWORKS 制造商全称:SKYWORKS 功能描述:GaAs IC Control FET Series 300 kHz-2.5 GHz |
| AF002N2-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog Attenuator |
| AF002N2-32 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:GaAs IC 15 dB Voltage Variable Attenuator Single Control DC-2 GHz |
| AF002N2-32LF | 制造商:SKYWORKS 制造商全称:SKYWORKS 功能描述:GaAs IC 15 dB Voltage Variable Attenuator Single Control 300 kHz-2 GHz |
| AF0062 | 制造商:Alltrade Tools LLC 功能描述:4-WAY METAL ENCLOSURE KEY |
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