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参数资料
| 型号： | AF2301PWA |
| 英文描述： | LJT 41C 41#16 PIN WALL RECP |
| 中文描述： | 20V的P沟道增强型MOS管 |
| 文件页数： | 2/4页 |
| 文件大小： | 131K |
| 代理商： | AF2301PWA |
AF2301P
20V P-Channel Enhancement Mode MOSFET
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Jul 20, 2004
2/4
Absolute Maximum Ratings
(T
A
=25oC unless otherwise noted)
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Continuous Drain Current
I
DM
Pulsed Drain Current
Rating
-20
±8
-2.3
-10
1.25
0.8
+150
-55 to +150
Units
V
V
A
A
T
A
=25oC
T
A
=70oC
P
D
Maximum Power Dissipation
W
T
J
Operating Junction Temperature
Operating Junction and Storage Temperature Range
oC
oC
T
J
, T
STG
Thermal Performance
Symbol
T
L
Lead Temperature (1/8” from case)
R
θ
JA
Junction to Ambient Thermal Resistance (PCB mounted)
Note:
Surface mounted on FR4 board t < 5 sec.
Electrical Characteristics
Rate I
D
=-2.3A, (T
A
=25
o
C unless otherwise noted)
Parameter
Limit
5
100
Units
S
oC/W
Limits
Typ.
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-16V, V
GS
=0V
V
GS
=±8V, V
DS
=0V
V
DS
=-5V, V
GS
=-10V
V
DS
=-5V, I
D
=-2.8A
-20
-
-
-0.45
-
-
-6
-
-
-
V
95
122
-
-
-
-
6.5
130
190
-
-1.0
±100
-
-
R
DS(ON)
Drain-Source On-State Resistance
m
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
g
fs
Dynamic
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Source-Drain Diode
I
S
V
SD
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Tranconductance
V
uA
nA
A
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
-
-
-
-
-
-
5.4
0.8
1.1
5
19
95
65
447
127
80
10
-
-
25
60
110
80
-
-
-
V
DS
=-6V, I
D
=-2.8A,
V
GS
=-4.5V
nC
V
DD
=-6V, R
L
=6
,
I
D
=-1A, V
GEN
=-4.5V,
R
G
=6
nS
V
DS
=-6V, V
GS
=0V,
f=1.0MHz
pF
Max. Diode Forward Current
Diode Forward Voltage
I
S
=-1.6A, V
GS
=0V
-
-
-
-1.6
-1.2
A
V
-0.8
Note:
Pulse test: pulse width < 300uS, duty cycle < 2%
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相关代理商/技术参数 |
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| AF2301PWLA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:20V P-Channel Enhancement Mode MOSFET |
| AF2302N | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET |
| AF2302NW | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET |
| AF2302NWA | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET |
| AF2302NWL | 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:20V N-Channel Enhancement Mode MOSFET |
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