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参数资料
| 型号： | AF70N02DA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | LEAD FREE, TO-252, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 491K |
| 代理商： | AF70N02DA |
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
2/6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
±20
V
TC=25C
66
ID
Continuous Drain Current, VGS=10V
TC=100C
42
A
IDM
Pulsed Drain Current (Note 1)
210
A
Total Power Dissipation
TC=25C
66
W
PD
Linear Derating Factor
0.53
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Maximum
Units
RθJC
Thermal Resistance Junction-Case
Max.
1.9
C/W
RθJA
Thermal Resistance Junction- Ambient
Max.
110
C/W
Electrical Characteristics (T
J=25C unless otherwise noted)
Limits
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
V
BVDSS/TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25C,
ID=1mA
-
0.037
-
V/C
VGS=10V, ID=33A
-
9
RDS(ON)
Static Drain-Source
On-Resistance
VGS=4.5V, ID=20A
-
18
m
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=33A
-
28
-
S
Drain-Source Leakage
Current(TJ=25C)
VDS=25V, VGS=0V
-
1
IDSS
Drain-Source Leakage
Current(TJ=150C)
VDS=20V, VGS=0V
-
25
uA
IGSS
Gate Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge (Note 2)
-
23
-
Qgs
Gate-Source Charge
-
3
-
Qgd
Gate-Drain (“Miller”) Charge
ID=33A
VDS=20V
VGS=5V
-
17
-
nC
td(on)
Turn-On Delay Time (Note 2)
-
8.8
-
tr
Rise Time
-
95
-
td(off)
Turn-Off Delay Time
-
24
-
tf
Fall-Time
VDS=15V
ID=33A
RG=3.3, VGS=10V
RD=0.45
-
14
-
nS
Ciss
Input Capacitance
-
790
-
Coss
Output Capacitance
-
475
-
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=25V,
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Sym.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current (Body Diode) VD=VG=0V, VS=1.26V
-
66
A
ISM
Pulsed Source Current (Body Diode)
(Note 1)
-
210
A
VSD
Forward On Voltage (Note 2)
TJ=25C, IS=66A,
VGS=0V
-
1.26
V
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