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参数资料
| 型号： | AF70N02DA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | LEAD FREE, TO-252, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 491K |
| 代理商： | AF70N02DA |
AF70N02
N-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 10, 2005
3/6
Drain-Source Avalanche Ratings
Sym.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy (Note 2)
-
61
mJ
IAR
Avalanche Current
VDD=25V, ID=35A,
L=100uH, VGS=10V
-
35
A
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Typical Performance Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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