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参数资料
| 型号： | AF9903MSA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 4.3 A, 35 V, 0.048 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 799K |
| 代理商： | AF9903MSA |
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Seo 22, 2005
2/8
Absolute Maximum Ratings
Symbol
Parameter
N-Channel P-Channel
Units
VDS
Drain-Source Voltage
35
-35
VGS
Gate-Source Voltage
±20
V
TA=25C
4.3
-3.6
ID
Continuous Drain Current (Note 1)
TA=70C
3.4
-2.8
A
IDM
Pulsed Drain Current (Note 2)
20
-20
A
Total Power Dissipation
TA=25C
1.38
W
PD
Linear Derating Factor
0.01
W/C
TSTG
Storage Temperature Range
-55 to 150
C
TJ
Operating Junction Temperature Range
-55 to 150
C
Thermal Data
Symbol
Parameter
Value
Units
RθJA
Thermal Resistance Junction-Ambient (Note 1)
Max.
90
C/W
Electrical Characteristics (T
J=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
N
35
-
BVDSS
Drain-Source breakdown Voltage
VGS=0V, ID=-250uA
P
-35
-
V
Reference to 25 C,
ID=1mA
N
-
0.03
-
BVDSS/
TJ
Breakdown Voltage Temperature
Coefficient
Reference to 25 C,
ID=-1mA
P
-
-0.02
-
V/C
VGS=10V, ID=4A
-
48
VGS=4.5V, ID=3A
N
-
70
VGS=-10V, ID=-3A
-
72
RDS(ON)
Static Drain-Source
On-Resistance (Note 3)
VGS=-4.5V, ID=-2A
P
-
100
m
VDS= VGS, ID=250uA
N
1
-
3
VGS(th)
Gate-Threshold Voltage
VDS= VGS, ID=-250uA
P
-1
-
-3
V
VDS=10V, ID=4A
N
-
8
-
gfs
Forward Transconductance
VDS=-10V, ID=-3A
P
-
6
-
S
TJ=25C VDS=30V, VGS=0V
-
1
TJ=70C VDS=24V, VGS=0V
N
-
25
TJ=25C VDS=-30V, VGS=0V
-
-1
IDSS
Drain-Source Leakage
Current
TJ=70C VDS=-24V, VGS=0V
P
-
-25
uA
N
-
±100
IGSS
Gate-Source Leakage
VGS=±20V
P
-
±100
nA
N
-
6
10
Qg
Total Gate Charge (Note 3)
P
-
6
10
N
-
2
-
Qgs
Gate-Source Charge
P
-
1
-
N
-
3
-
Qgd
Gate-Drain (“Miller”) Charge
N-Channel
VDS=28V, VGS=4.5V
ID=4A
P-Channel
VDS=-28V, VGS=-4.5V
ID=-3A
P
-
3
-
nC
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