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参数资料
| 型号： | AF9903MSA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 4.3 A, 35 V, 0.048 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 799K |
| 代理商： | AF9903MSA |
AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Seo 22, 2005
3/8
Electrical Characteristics (T
J=25C unless otherwise specified)
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
N
-
6
-
td(on)
Turn-On Delay Time (Note 3)
P
-
7
-
N
-
5
-
tr
Rise Time
P
-
5
-
N
-
14
-
td(off)
Turn-Off Delay Time
P
-
19
-
N
-
4
-
tf
Fall-Time
N-Channel
VDS=15V, VGS=10V
ID=1A, RG=3.3,
RD=15
P-Channel
VDS=-15V, VGS=-10V
ID=-1A, RG=3.3,
RD=15
P
-
4
-
ns
N
-
490
780
Ciss
Input Capacitance
P
-
420
1100
N
-
130
-
Coss
Output Capacitance
P
-
140
-
N
-
55
-
Crss
Reverse Transfer Capacitance
N-Channel
VGS=0V, VDS=25V
f=1.0MHz
P-Channel
VGS=0V, VDS=-25V
f=1.0MHz
P
-
65
-
pF
Source-Drain Diode
Limits
Symbol
Parameter
Test Conditions
CH
Min.
Typ.
Max.
Unit
IS=1.2A, VGS=0V
N
-
1.2
VSD
Forward On Voltage (Note 3)
IS=-1.2A, VGS=0V
P
-
-1.2
V
N
-
18
-
trr
Reverse Recovery Time
P
-
20
-
ns
N
-
11
-
Qrr
Reverse Recovery Charge
N-Channel
IS=4A, VGS=0V
dl/dt=100A/s
P-Channel
IS=-3A, VGS=0V
dl/dt=-100A/s
P
-
16
-
nC
Note 1: Surface Mounted on 1 in
2 copper pad of FR4 board; t ≤10sec; 186C/W when mounted on Min. copper pad.
Note 2: Pulse width limited by Max. junction temperature
Note 3: Pulse width < 300us, duty cycle < 2%.
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