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参数资料
| 型号： | AF9926NSLA |
| 厂商： | INTEGRATED CIRCUIT TECHNOLOGY CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SO-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 411K |
| 代理商： | AF9926NSLA |
AF9926N
N-Channel Enhancement Mode Power MOSFET
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/6
Features
- Capable of 2.5V Gate Drive
- Low On-resistance
- Low Drive Current
- Surface Mount Package
Product Summary
BVDSS (V)
RDS(ON) (m)
ID (A)
20
30
6
Pin Assignments
SO-8
5
6
7
8
4
3
2
1
D1
D2
S1
G1
S2
G2
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Pin Descriptions
Pin Name
Description
S1/2
Source
G1/2
Gate
D1/2
Drain
Ordering information
A X 9926N X X X
PN
Package
Feature
F :MOSFET
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
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