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参数资料
| 型号： | AFM02N6-032 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件页数： | 1/3页 |
| 文件大小： | 26K |
| 代理商： | AFM02N6-032 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 5/99A
Surface Mount GaAs MESFET Chip
Features
s Low Noise Figure, 0.55 dB @ 4 GHz,
2.2 dB @ 12 GHz
s High Gain, 16 dB @ 4 GHz,
7.0 dB @ 12 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
s Surface Mount Package
s Available in Tape and Reel Packaging
SOT-143
Description
The AFM02N6-032 is a low cost surface mount GaAs
MESFET chip in a plastic SOT-143 package. It has low
noise and high gain from L through Ku bands, making it
suitable for a wide range of commercial applications. The
device employs 0.25
m Ti/Pd/Au gates and surface
passivation to ensure a rugged, reliable part. The
components are available in tape and reel and are ready
for automatic insertion equipment.
AFM02N6-032
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)VDS = 2 V, VGS = 0 V
25.0
50.0
90.0
mA
Transconductance (gm)
VDS = 2 V, IDS = 10 mA
30.0
40.0
mS
Pinch-off Voltage (VP)
VDS = 2 V, IDS = 0.3 mA
-0.5
-0.95
-2.0
V
Gate to Source
IGS = -200 A
-4.0
-5.50
V
Breakdown Voltage (Vbgs)
Noise Figure (NF)
VDS = 2 V, IDS = 10 mA, F = 4 GHz
0.55
0.75
dB
Associated Gain (GA)
11.0
13.5
dB
Maximum Available Gain (MAG)
14.0
16.5
dB
Noise Figure (NF)
VDS = 2 V, IDS = 10 mA, F = 12 GHz
2.2
3.0
dB
Associated Gain (GA)
5.5
7.4
dB
Maximum Available Gain (MAG)
6.0
7.5
dB
Electrical Specifications at 25°C
0.110 (2.80 mm) MIN.
0.120 (3.04 mm) MAX.
0.083 (2.10 mm) MIN.
0.104 (2.64 mm) MAX.
0.012 (0.30 mm) MIN.
0.020 (0.50 mm) MAX.
0.0005 (0.01 mm) MIN.
0.004 (0.15 mm) MAX.
0.031 (0.80 mm) MIN.
0.047 (1.20 mm) MAX.
0.030 (0.76 mm) MIN.
0.035 (0.89 mm) MAX.
0.047 (1.20 mm) MIN.
0.055 (1.40 mm) MAX.
0.003 (0.08 mm) MIN.
0.008 (0.20 mm) MAX.
0.022 (0.55 mm) REF.
8 MAX.
0.020 (0.50 mm) REF.
0.028 (0.70 mm) REF.
0.068 (1.72 mm) REF.
0.076 (1.92 mm) REF.
4
3
2
1
Characteristic
Value
Drain to Source Voltage (VDS)
4 V
Gate to Source Voltage (VGS)
-2 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10
A
Total Power Dissipation (PT)
200 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
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