- 您现在的位置：买卖IC网 > PDF目录51252 > AFM06P3-212 KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET PDF资料下载
参数资料
| 型号： | AFM06P3-212 |
| 元件分类： | 功率晶体管 |
| 英文描述： | KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 文件页数： | 1/3页 |
| 文件大小： | 25K |
| 代理商： | AFM06P3-212 |
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/99A
Ka Band Power GaAs MESFET Chips
Features
s 22 dBm Output Power @ 18 GHz
s High Associated Gain, 9 dB @ 18 GHz
s High Power Added Efficiency, 23%
s Broadband Operation, DC–18 GHz
s 0.25
m Ti/Pd/Au Gates
s Passivated Surface
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25
m and a
total gate periphery of 600
m. These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
AFM06P3-212, AFM06P3-213
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Saturated Drain Current (IDSS)
130.0
200.0
270.0
mA
Transconductance (gm)
VDS = 2 V, VGS = 0 V
90.0
120.0
mS
Pinch-Off Voltage (VP)VDS = 5 V, IDS = 1.5 mA
1.0
3.0
5.0
V
Gate to Drain Breakdown
IGD = 600 A
8.0
12.0
V
Voltage (Vbgd)
Output Power at 1 dB
22.0
dBm
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
VDS = 5 V, IDS = 70 mA, F = 18 GHz
9.0
dB
Power Added Efficiency (
ηadd)
23.0
%
Electrical Specifications at 25°C
Source
Gate
Source
Drain
Source
Gate
Source
212
213
Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-4 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
1 mA
Total Power Dissipation (PT)
1.1 W
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C
Absolute Maximum Ratings
相关PDF资料 |
PDF描述 |
|---|---|
| AFM06P3-213 | KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| AFM06P3-212 | KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| AFP02N8-000 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AFP02N8-000 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AG1801DI | DATACOM TRANSFORMER FOR 10/100/1000 BASE-T APPLICATION(S) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AFM06P3-213 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:Ka Band Power GaAs MESFET Chips |
| AFM08P2-000 | 制造商:ALPHA 制造商全称:ALPHA 功能描述:Ka Band Power GaAs MESFET Chip |
| AFM1.0 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:ADAPTIVE FUZZY MODELLER |
| AFM10 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:ADAPTIVE FUZZY MODELLER |
| AFM10-301-M | 制造商:American Electronic Components Inc 功能描述:MERCURY DISP CONTACTOR SPST-NO |
发布紧急采购，3分钟左右您将得到回复。