参数资料
型号: AGLN250V2-CSG81I
厂商: Microsemi SoC
文件页数: 99/150页
文件大小: 0K
描述: IC FPGA NANO 1KB 250K 81-CSP
标准包装: 640
系列: IGLOO nano
逻辑元件/单元数: 6144
RAM 位总计: 36864
输入/输出数: 60
门数: 250000
电源电压: 1.14 V ~ 1.575 V
安装类型: 表面贴装
工作温度: -40°C ~ 85°C
封装/外壳: 81-WFBGA,CSBGA
供应商设备封装: 81-CSP(5x5)
IGLOO nano DC and Switching Characteristics
2-36
Revision 17
Timing Characteristics
Applies to 1.5 V DC Core Voltage
Applies to 1.2 V DC Core Voltage
Table 2-53 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
0.97
5.44 0.19 1.03
1.44
0.66
5.25 5.44 1.69 1.35
ns
4 mA
STD
0.97
4.44 0.19 1.03
1.44
0.66
4.37 4.44 1.99 2.11
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-54 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
0.97
2.64 0.19 1.03
1.44
0.66
2.59 2.64 1.69 1.40
ns
4 mA
STD
0.97
2.08 0.19 1.03
1.44
0.66
2.12 1.95 1.99 2.19
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-55 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
1.55
5.92 0.26 1.13
1.59
1.10
5.72 5.92 2.11 1.95
ns
4 mA
STD
1.55
4.91 0.26 1.13
1.59
1.10
4.82 4.91 2.42 2.73
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-56 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed Grade
tDOUT
tDP
tDIN
tPY
tPYS
tEOUT
tZL
tZH
tLZ
tHZ
Units
2 mA
STD
1.55
3.05 0.26 1.13
1.59
1.10
3.01 3.05 2.10 2.00
ns
4 mA
STD
1.55
2.49 0.26 1.13
1.59
1.10
2.53 2.34 2.42 2.81
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
相关PDF资料
PDF描述
BR93L76RFVT-WE2 IC EEPROM 8KBIT 2MHZ 8TSSOP
AGLN250V2-ZCSG81I IC FPGA NANO 1KB 250K 81-CSP
A40MX02-FPLG68 IC FPGA MX SGL CHIP 3K 68-PLCC
A40MX02-FPL68 IC FPGA MX SGL CHIP 3K 68-PLCC
BR25S640F-WE2 IC EEPROM SPI 64KB 20MHZ 8-SOP
相关代理商/技术参数
参数描述
AGLN250V2-DIELOT 制造商:Microsemi Corporation 功能描述:AGLN250V2-DIELOT - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Microsemi SOC Products Group 功能描述:AGLN250V2-DIELOT - Gel-pak, waffle pack, wafer, diced wafer on film
AGLN250V2-QNG100I 制造商:Microsemi Corporation 功能描述:FPGA IGLOO NANO FAMILY 250K GATES 130NM (CMOS) TECHNOLOGY 1. - Trays
AGLN250V2-VQ100 功能描述:IC FPGA NANO 1KB 250K 100VQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - FPGA(现场可编程门阵列) 系列:IGLOO nano 标准包装:152 系列:IGLOO PLUS LAB/CLB数:- 逻辑元件/单元数:792 RAM 位总计:- 输入/输出数:120 门数:30000 电源电压:1.14 V ~ 1.575 V 安装类型:表面贴装 工作温度:-40°C ~ 85°C 封装/外壳:289-TFBGA,CSBGA 供应商设备封装:289-CSP(14x14)
AGLN250V2-VQ100I 功能描述:IC FPGA NANO 1KB 250K 100VQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - FPGA(现场可编程门阵列) 系列:IGLOO nano 标准包装:152 系列:IGLOO PLUS LAB/CLB数:- 逻辑元件/单元数:792 RAM 位总计:- 输入/输出数:120 门数:30000 电源电压:1.14 V ~ 1.575 V 安装类型:表面贴装 工作温度:-40°C ~ 85°C 封装/外壳:289-TFBGA,CSBGA 供应商设备封装:289-CSP(14x14)
AGLN250V2-VQG100 功能描述:IC FPGA 250K 1.2-1.5V 100VTQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - FPGA(现场可编程门阵列) 系列:IGLOO nano 标准包装:60 系列:XP LAB/CLB数:- 逻辑元件/单元数:10000 RAM 位总计:221184 输入/输出数:244 门数:- 电源电压:1.71 V ~ 3.465 V 安装类型:表面贴装 工作温度:0°C ~ 85°C 封装/外壳:388-BBGA 供应商设备封装:388-FPBGA(23x23) 其它名称:220-1241