- 您现在的位置：买卖IC网 > PDF目录48363 > AGR18125EU L BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | AGR18125EU |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 76K |
| 代理商： | AGR18125EU |
2
Agere Systems Inc.
125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
August 2003
AGR18125E
Product Brief
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* Across full DCS band, 1.805 GHz—1.880 GHz.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =200 A)
V(BR)DSS
65
——
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
4Adc
Zero Gate Voltage Drain Leakage Current (VDS =26 V, VGS =0V)
IDSS
——
12
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—
9
—
S
Gate Threshold Voltage (VDS =10V, ID = 400 A)
VGS(TH)
——
4.8
Vdc
Gate Quiescent Voltage (VDS =26 V, ID = 1200 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID = 1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Drain-to-gate Capacitance
(VDS =26V, VGS =0 V, f= 1MHz)
CRSS
—
3.0
—
pF
Drain-to-source Capacitance
(VDS =26V, VGS =0 V, f= 1MHz)
COSS
—
48
—
pF
Functional Tests* (in Agere Systems Supplied Test Fixture)
Power Gain
(VDS =26V, POUT =125 W, IDQ = 1200 mA)
GL
—
13.5
—
dB
Drain Efficiency
(VDS =26V, POUT =125 W, IDQ = 1200 mA)
η
—
50
—
%
EDGE Linearity Characterization
(POUT = 28 W, f = 1.840 GHz, VDS =26V, IDQ = 1200 mA)
Modulation spectrum @ ± 400 kHz
—–60
—
dBc
Modulation spectrum @ ± 600 kHz
—–72
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 1200 mA)
P1dB
—
125
—
W
Input VSWR
VSWRI
——
2:1
Ruggedness
(VDS =26V, POUT =30W, IDQ = 1200 mA,
VSWR = 10:1 [all angles])
ψ
No degradation in output
power.
相关PDF资料 |
PDF描述 |
|---|---|
| AGR18125EU | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR18125EF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR19180EU | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| AGR21045EF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
发布紧急采购，3分钟左右您将得到回复。