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参数资料
| 型号： | AGR19180EU |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 1/9页 |
| 文件大小： | 230K |
| 代理商： | AGR19180EU |
Preliminary Data Sheet
July 2003
AGR19180E
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180E is a 180 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier
applications.
Figure 1. Available Packages
Features
s
Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 1961.25 MHz,
IS-95/97 CDMA pilot, sync, paging, traffic codes
8—13 (9 channels) 1.2288 MHz channel band-
width (BW), adjacent channel power ration (ACPR)
measured over a 30 kHz BW at f1 –885 kHz,
f2 +885 kHz. Distortion products measured over
1.2288 MHz channel BW at f1 –2.5 MHz,
f2 +2.5 MHz. Peak/avg = 9.72 dB @ 0.01% proba-
bility on CCDF.
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
s
High-reliability, gold-metalization process.
s
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
s
Best-in-class thermal resistance.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 s at 10% duty.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electro-
static charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
AGR19180EU
AGR19180EF
375D–03, STYLE 1
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR19180EU
AGR19180EF
R
θJC
R
θJC
0.35
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Total Dissipation at TC = 25 °C:
AGR19180EU
AGR19180EF
PD
500
W
Derate Above 25
°C:
AGR19180EU
AGR19180EF
—
3
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
Device
Minimum
Threshold
Class
HBM
CDM
HBM
CDM
AGR19180E
——
1TBD
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