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参数资料
| 型号： | AGR19180EU |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 2/9页 |
| 文件大小： | 230K |
| 代理商： | AGR19180EU |
2
Agere Systems Inc.
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
July 2003
AGR19180E
Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD =28 Vdc, IDQ = 2 x 800 mA, and POUT = 38 W average.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID =300 A)
V(BR)DSS
65
——
Vdc
Gate-source Leakage Current (VGS =5 V, VDS =0V)
IGSS
——
6Adc
Zero Gate Voltage Drain Leakage Current (VDS =28 V, VGS =0V)
IDSS
——
18
Adc
On Characteristics
Forward Transconductance (VDS =10 V, ID =1 A)
GFS
—
12
—
S
Gate Threshold Voltage (VDS =10V, ID =600 A)
VGS(TH)
——
3.0
Vdc
Gate Quiescent Voltage (VDS =28 V, ID =2 x 800 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS =10V, ID =1 A)
VDS(ON)
—
0.08
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f= 1.0 MHz)
(Part is internally matched both on input and output.)
CRSS
—
4.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain
(VDD =28 Vdc, POUT = 38 W average, 2-Carrier N-CDMA, IDQ = 1600 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
GPS
—
14.5
—
dB
Drain Efficiency
(VDD =28 Vdc, POUT = 38 W average, 2-Carrier N-CDMA, IDQ = 1600 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
—
26
—
%
Third-order Intermodulation Distortion*
(VDD =28 Vdc, POUT = 38 W average, 2-Carrier N-CDMA, IDQ = 1600 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
IM3 measured in a 1.2288 MHz integration bandwidth centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
IM3
—–33
—
dBc
Adjacent Channel Power Ratio*
(VDD =28 Vdc, POUT = 38 W average, 2-Carrier N-CDMA, IDQ = 1600 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 30 kHz integration bandwidth centered at
f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel power)
ACPR
—–48.5
—
dBc
Input Return Loss
(VDD =28 Vdc, POUT = 38 W average, 2-Carrier N-CDMA, IDQ = 1600 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IRL
—–12
—
dB
Ruggedness
(VDD =28 V, POUT = 180 W CW, IDQ = 1600 mA, f = 1930 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
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