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参数资料
| 型号： | AGR19180EU |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 4/9页 |
| 文件大小： | 230K |
| 代理商： | AGR19180EU |
4
Agere Systems Inc.
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
July 2003
AGR19180E
Preliminary Data Sheet
Typical Performance Characteristics
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
Figure 3. Series Equivalent Input and Output Impedances
MHz (f)
ZS
(Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
1930 (f1)
2.58 – j5.9
3.2 – j4.67
1960 (f2)
2.36 – j5.26
2.85 – j3.86
1990 (f3)
2.37 – j4.51
2.72 – j3.07
0.1
0.2
0.3
0.4
0.5
0.6
0
.7
0.7
0
.8
0.8
0
.9
0.9
1.0
1
.2
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180±
90
-90
-8
5
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.0
4
0.05
0.0
6
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.1
8
0.1
9
0.2
1
0
.2
2
0.23
0.24
0.25
0.26
0.27
0.2
8
0.2
9
0.3
1
0.3
2
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.4
2
0.43
0.4
4
0.45
0.4
6
0.4
7
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
IS
S
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
F
L
E
C
T
IO
N
C
O
E
F
IC
IE
N
T
IN
D
E
G
R
E
S
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
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W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
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A
D
<
IN
D
U
C
T
CA
PA
CIT
IV
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EA
CT
AN
CE
CO
M
PO
N
EN
T
(-j
X/
Zo
),
O
R
IN
D
U
C
T
IV
E
SU
SC
E
P
T
A
N
C
E
(-
jB
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
ZL
f3
f1
ZS
f3
f1
Z0 = 10
DUT
INPUT MATCH
OUTPUT MATCH
–
+
ZS
ZL
+
–
DRAIN (1)
SOURCE (3)
GATE (2)
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| AGR21060EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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