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参数资料
| 型号： | AGR18125EU |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | SURFACE MOUNT PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 76K |
| 代理商： | AGR18125EU |
Agere Systems Inc.
3
Product Brief
AGR18125E
August 2003
125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR18125EU
AGR18125EF
Label Notes:
s
M before the part number denotes model program. X before the part number denotes engineering prototype.
s
YYWWUR is the date code including place of manufacture: year year work week (YYWW), U = United States, R = Reading, PA.
s
ZZZZZZZ = seven-digit serial number.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
AGERE
M-AGR21125U
YYWWUR
ZZZZZZZ
AGR18125U
1
3
2
AGERE
M-AGR21125F
YYWWUR
ZZZZZZZ
1
3
2
AGR18125F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AGR19030EF | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19045EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060E | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
| AGR19060EF | 功能描述:射频MOSFET电源晶体管 RF LDMOS Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| AGR19060EU | 制造商:TRIQUINT 制造商全称:TriQuint Semiconductor 功能描述:60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor |
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