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参数资料
| 型号： | AGR21180EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 5/10页 |
| 文件大小： | 355K |
| 代理商： | AGR21180EF |
180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
AGR21180EF
Typical Performance Characteristics
(Optimally tuned for 28 Vds, 2 x 800 mA IDQ, POUT = 2 W-CDMA 38 W average operation.)
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
Figure 3. Series Equivalent Balanced Input and Output Impedances
MHz (f)
ZS
(
Complex Source Impedance)
ZL
(Complex Optimum Load Impedance)
2110 (f1)
4.02 – j7.92
3.92 – j6.59
2140 (f2)
3.98 – j7.73
3.79 – j6.32
2170 (f3)
3.80 – j7.63
3.67 – j6.12
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
50
0.2
0.4
0.6
0.8
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.2
2
0.23
0.24
0.25
0.26
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.49
0.0
A
N
G
L
E
O
F
T
R
A
N
SM
IS
SI
O
N
C
O
E
FF
IC
IE
N
T
IN
D
E
G
R
E
S
A
N
G
L
E
O
F
R
E
FL
E
C
T
IO
N
C
O
E
FF
IC
IE
N
T
IN
D
E
G
R
E
S
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
<
W
A
V
E
L
E
N
G
T
H
S
T
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W
A
R
D
L
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A
D
<
IN
D
U
C
T
CA
PA
CIT
IV
ER
EA
CT
AN
CE
CO
M
PO
NE
N
T
(-j
X/
Zo
),
O
R
IN
D
U
C
TI
V
E
SU
SC
EP
TA
N
C
E
(-
jB
/
Y
o)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZS
f3 f1
ZL
f3
f1
Z0 = 10
DUT
1A
1B
3
2A
2B
+
ZS
ZL
–
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
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相关代理商/技术参数 |
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