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参数资料
| 型号： | AGR26045EF |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 7/9页 |
| 文件大小： | 373K |
| 代理商： | AGR26045EF |
AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 430 mA.
Figure 8. Gain, Efficiency, ACP, and IMD vs. Power
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA.
Figure 9. Two-Carrier W-CDMA Broadband Performance
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