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参数资料
| 型号： | AGRA10XM |
| 厂商： | LSI CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | GULL WING PACKAGE-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 326K |
| 代理商： | AGRA10XM |
Agere Systems Inc.
3
Preliminary Data Sheet
AGRA10XM
August 2004
10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics (continued)
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 5. RF Characteristics, 450 MHz—500 MHz
1. Across band, 450 MHz—500 MHz.
Table 6. RF Characteristics, 865 MHz—895 MHz
1. Across band, 865 MHz—895 MHz.
Table 7. RF Characteristics, 921 MHz—960 MHz
1. Across band, 921 MHz—960 MHz.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 28 V, POUT = 2 W, IDQ = 115 mA)
GPS
—24
—
dB
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 115 mA)
η
—64
—
%
Two-Tone Linearity Characterization (POUT = 3 W, VDS = 28 V,
IDQ = 115 mA) (spectrum: tones placed ±50 kHz from carrier)
IM3
—
–30
—
dBc
Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 115 mA)
P1dB
—
16
—
W
Input Return Loss
IRL
—
–10
—
dB
Ruggedness
(VDS = 28 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles)
ψ
No degradation in output power.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 28 V, POUT = 2 W, IDQ = 115 mA)
GPS
—22
—
dB
Drain Efficiency (VDS = 28 V, POUT = P1dB, IDQ = 115 mA)
η
—62
—
%
EDGE Linearity Characterization
(POUT = 2 W, f = 880 MHz, VDS = 28 V, IDQ = 115 mA):
Modulation Spectrum @ ±400 kHz (Alt1)
—
–60
—
dBc
Modulation Spectrum @ ±600 kHz (Alt2)
—
–72
—
dBc
Output Power (VDS = 28 V, 1 dB gain compression, IDQ = 115 mA)
P1dB
—
11
—
W
Input Return Loss
IRL
—
–10
—
dB
Ruggedness
(VDS = 28 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles)
ψ
No degradation in output power.
Parameter
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain (VDS = 26 V, POUT = 2 W, IDQ = 115 mA)
GPS
—21
—
dB
Drain Efficiency (VDS = 26 V, POUT = P1dB, IDQ = 115 mA)
η
—60
—
%
EDGE Linearity Characterization
(POUT = 2 W, f = 940.5 MHz, VDS = 28 V, IDQ = 115 mA):
Modulation Spectrum @ ±400 kHz (Alt1)
—
–60
—
dBc
Modulation Spectrum @ ±600 kHz (Alt2)
—
–72
—
dBc
Output Power (VDS = 26 V, 1 dB gain compression, IDQ = 115 mA)
P1dB
10
11
—
W
Input Return Loss
IRL
—
–10
—
dB
Ruggedness
(VDS = 26 V, POUT = 10 W, IDQ = 115 mA, VSWR = 10:1, all angles)
ψ
No degradation in output power.
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