参数资料
型号: AH116-S8G
厂商: TRIQUINT SEMICONDUCTOR INC
元件分类: 放大器
英文描述: 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: GREEN, PLASTIC, SMT, MS-012, SOIC-8
文件页数: 1/4页
文件大小: 234K
代理商: AH116-S8G
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 4
March 2008
AH116
Watt, High Linearity InGaP HBT Amplifier
Product Features
800 – 1000 MHz
17.5 dB Gain @ 900 MHz
+28 dBm P1dB
+43 dBm Output IP3
+5V Single Positive Supply
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH116 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT
is able to achieve high performance for various narrow-
band tuned application circuits with up to +43 dBm OIP3
and +28 dBm of compressed 1-dB power and is housed
in a lead-free/green/RoHS-compliant SOIC-8 package. All
devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
AH116 to maintain high linearity over temperature and
operate directly off a +5 V supply.
This combination
makes the device an excellent fit for transceiver line
cards and power amplifiers in current and next generation
multi-carrier 3G base stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications
(1)
Parameters
Units
Min
Typ
Max
Frequency Range
MHz
900
Gain
dB
15
17.5
Input R.L.
dB
18
Output R.L.
dB
7
Output P1dB
dBm
+27
+28.7
Output IP3
(2)
dBm
+42
+43
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7
Operating Current Range
(3)
mA
200
250
300
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25 C, +5V supply, 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150 °C
RF Input Power (continuous)
+22 dBm
Device Voltage
+8 V
Device Current
400 mA
Device Power
2 W
Thermal Resistance, Rth
62°C/W
Junction Temperature
+200°C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameters
Units
Typical
Frequency
MHz
900
Gain
dB
17.5
S11
dB
-18
S22
dB
-7
Output P1dB
dBm
+28.7
Output IP3
(2)
dBm
+43
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+23
Noise Figure
dB
7
Supply Bias
+5 V @ 250 mA
Ordering Information
Part No.
Description
AH116-S8G
Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH116-S8PCB900
900 MHz Evaluation Board
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
8
7
6
5
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