- 您现在的位置：买卖IC网 > PDF目录223323 > AH212-EG 1 Watt High Linearity, High Gain InGaP HBT Amplifier PDF资料下载
参数资料
| 型号： | AH212-EG |
| 英文描述： | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| 中文描述： | 1瓦特高线性，高增益的InGaP HBT功率放大器 |
| 文件页数： | 8/12页 |
| 文件大小： | 591K |
| 代理商： | AH212-EG |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 5 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
AH212-S8 2015 MHz Reference Design for TD-SCDMA Applications
Typical RF Performance at 25
C
Frequency (MHz)
2010
2025
Gain (dB)
25.5
25.2
Input Return Loss (dB)
17
19
Output Return Loss (dB)
10.5
10
Output P1dB (dBm)
+30
Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
+48
+47.5
Channel Power (dBm)
(@-45 dBc ACPR, IS-95, 9 channels fwd)
+23.5
Noise Figure (dB)
6
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
CAP
ID=C9
C=47 pF
CAP
ID=C10
C=1000 pF
CAP
ID=C7
C=2.7 pF
CAP
ID=C2
C=47 pF
CAP
ID=C11
C=4.7E6 pF
CAP
ID=C5
C=1000 pF
IND
ID=L2
L=18 nH
RES
ID=R1
R=10 Ohm
CAP
ID=C8
C=47 pF
CAP
ID=C1
C=47 pF
CAP
ID=C4
C=1000 pF
RES
ID=R3
R=75 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=125 mil
Eeff=4.6
Loss=0
F0=0 MHz
IND
ID=L1
L=18 nH
CAP
ID=C6
C=1000 pF
RES
ID=R2
R=0 Ohm
1
2
3
4
5
6
7
8
NET="AH212"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
SIZE 1210
C7 is placed between silkscreen marker "2" and "3" on WJ's eval
All passive components are of size 0603
Vcc = +5 V
VBC = +5 V
unless otherwise noted.
Board or @ 17 degrees at 2.01GHz away from pins 6 and 7.
Size 0805
S21 vs. Frequency
23
24
25
26
27
28
2000
2005
2010
2015
2020
2025
Frequency (MHz)
S
2
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
2000
2005
2010
2015
2020
2025
Frequency (MHz)
S
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2000
2005
2010
2015
2020
2025
Frequency (MHz)
S
2
(d
B
)
+25
°
C
-40
°
C
+85
°
C
OIP3 vs. Frequency
+25
°
C
,
+
1
5
d
B
m
/
t
o
n
e
35
40
45
50
55
2010
2015
2020
2025
Frequency (MHz)
O
IP
3
(d
B
m
)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd,
±
8
5
k
H
z
o
f
s
e
t
,
3
0
k
H
z
M
e
a
s
B
W
,
2
0
1
0
M
H
z
-75
-65
-55
-45
-35
19
20
21
22
23
24
Output Channel Power (dBm)
A
C
P
R
(d
B
c
)
8
6
7
5
相关PDF资料 |
PDF描述 |
|---|---|
| AH212-EPCB1960 | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| AH212 | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| AH3-G | 50 MHz - 870 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AHE2812DF/HBPBF | 2-OUTPUT 15 W DC-DC REG PWR SUPPLY MODULE |
| AHE2815D/HBPBF | 2-OUTPUT 15 W DC-DC REG PWR SUPPLY MODULE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AH212-EGPCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 27dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGPCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGTR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH212-EPCB1960 | 功能描述:射频开发工具 1800-2400MHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EPCB2140 | 功能描述:射频开发工具 1800-2200MHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
发布紧急采购，3分钟左右您将得到回复。