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| 型号： | AH212 |
| 英文描述： | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| 中文描述： | 1瓦特高线性，高增益的InGaP HBT功率放大器 |
| 文件页数： | 1/12页 |
| 文件大小： | 591K |
| 代理商： | AH212 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Product Features
1800
–
2400 MHz
26 dB Gain
+30 dBm P1dB
+46 dBm Output IP3
+5V Single Positive Supply
Internal Active Bias
Lead-free/green/RoHS-compliant
SOIC-8 & 4x5mm DFN Package
Applications
Mobile Infrastructure
WiBro Infrastructure
TD-SCDMA
Product Description
The AH212 is a high dynamic range two-stage driver
amplifier in a low-cost surface mount package.
The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +30 dBm of compressed 1-dB
power. The amplifier is available in an industry-standard
SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm
DFN package. All devices are 100% RF and DC tested.
The product is targeted for use as linear driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA,
and WiBro, where high linearity and high power is
required.
The internal active bias allows the AH212 to
maintain high linearity over temperature and operate
directly off a +5 V supply.
Functional Diagram
AH212-S8G
AH212-EG
Specifications
(1)
Parameters
Units Min
Typ
Max
Operational Bandwidth
MHz
1800
2400
Test Frequency
MHz
2140
Gain
dB
22.2
25
Input Return Loss
dB
25
Output Return Loss
dB
9
Output P1dB
dBm
+29
+29.5
Output IP3
(2)
dBm
+43.5
+46
Noise Figure
dB
6.0
W-CDMA Channel Power
@ -45 dBc ACLR
dBm
+21
Operating Current Range , Icc
mA
340
400
500
Stage 1 Amp Current, Icc1
mA
85
Stage 2 Amp Current, Icc2
mA
315
Device Voltage, Vcc
V
5
1. Test conditions unless otherwise noted: 25
C
,
+
5
V
,
i
n
t
u
n
e
d
a
p
l
i
c
a
t
i
o
n
c
i
r
c
u
i
t
.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
C
Storage Temperature
-65 to +150
C
RF Input Power (continuous)
+26 dBm
Device Voltage
+7 V
Device Current
900 mA
Device Power
5 W
Junction Temperature
+250
C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameters
Units
Typical
Frequency
MHz
1960
2140
Gain
(3)
dB
25.8
25
Input Return Loss
dB
15
25
Output Return Loss
dB
11
9
Output P1dB
(3)
dBm
+30
+29.5
Output IP3
dBm
+48.5
+46
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+23.5
W-CDMA Channel Power
@ -45 dBc ACLR
dBm
+21
Noise Figure
dB
5.5
6.0
Supply Bias
+5 V @ 400 mA
3. The performance is shown for the AH212-S8G (SOIC-8 package) at 25
C
. The AH212-EG in a 4x5
mm DFN package offers approximately 0.5dB more gain and 0.5 dB higher P1dB.
Ordering Information
Part No.
Description
AH212-S8G
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 package)
AH212-EG
1 Watt, High Gain InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 12-pin 4x5mm DFN package)
AH212-S8PCB1960
1960 MHz Evaluation Board
AH212-S8PCB2140
2140 MHz Evaluation Board
AH212-EPCB1960
1960 MHz Evaluation Board
AH212-EPCB2140
2140 MHz Evaluation Board
1
2
3
4
8
7
6
5
8
7
6
5
N
/
C
V
c
2
/
R
F
O
u
t
N
/
C
V
c
2
/
R
F
O
u
t
V
c
1
V
b
i
a
s
1
R
F
I
n
V
b
i
a
s
2
V
b
i
a
s
1
2
3
4
5
6
1
2
1
0
9
8
7
N
/
C
R
F
I
n
N
/
C
N
/
C
V
b
i
a
s
2
V
c
1
N
/
C
V
c
2
/
R
F
O
u
t
V
c
2
/
R
F
O
u
t
N
/
C
N
/
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AH212EG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH212-EG | 功能描述:射频放大器 1800-2400MHz 26dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH212-EGPCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 27dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGPCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGTR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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