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参数资料
| 型号： | AH212 |
| 英文描述： | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| 中文描述： | 1瓦特高线性，高增益的InGaP HBT功率放大器 |
| 文件页数： | 2/12页 |
| 文件大小： | 591K |
| 代理商： | AH212 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 10 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2140 MHz Application Circuit (AH212-EPCB2140)
Typical RF Performance at 25
C
FreFrequency
2140 MHz
Gain
25.5 dB
Input Return Loss
24 dB
Output Return Loss
9 dB
Output P1dB
+30.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
+46 dBm
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
+22 dBm
Noise Figure
6 dB
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
S21 vs. Frequency
23
24
25
26
27
28
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
2
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
2
(d
B
)
+25
°
C
-40
°
C
+85
°
C
Supply Bias vs. Temperature
350
370
390
410
430
450
-40
-15
10
35
60
85
Temperature (
°
C
)
O
IP
3
(d
B
m
)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25
°
C
35
40
45
50
55
12
13
14
15
16
17
18
Output Power (dBm)
O
IP
3
(d
B
m
)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +15 dBm/tone
35
40
45
50
55
-40
-15
10
35
60
85
Temperature (
°
C
)
O
IP
3
(d
B
m
)
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
26
27
28
29
30
31
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
P
1
d
B
(d
B
m
)
-40
°
C
+25
°
C
+85
°
C
Noise Figure vs. Frequency
3
4
5
6
7
8
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
N
F
(d
B
)
-40
°
C
+25
°
C
+85
°
C
ACLR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH,
±
5
M
H
z
o
f
s
e
t
,
2
1
4
0
M
H
z
-60
-55
-50
-45
-40
18
19
20
21
22
23
24
Output Channel Power (dBm)
A
C
L
R
(d
B
c
)
-40 C
+25 C
+85 C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AH212EG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH212-EG | 功能描述:射频放大器 1800-2400MHz 26dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH212-EGPCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 27dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGPCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGTR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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