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| 型号： | AH212 |
| 英文描述： | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| 中文描述： | 1瓦特高线性，高增益的InGaP HBT功率放大器 |
| 文件页数： | 11/12页 |
| 文件大小： | 591K |
| 代理商： | AH212 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 8 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Typical Device Data (DFN 4x5 mm)
S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25
C, calibrated to device leads)
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Gain
5
10
15
20
25
30
35
G
a
in
(d
B
)
DB(|S(2,1)|)
AH212
0
1
.
0
1
.
0
-
1
.
0
1
0
.
0
1
0
.
0
-
1
0
.
0
5
.
0
5
.
0
-
5
.
0
2
.
0
2
.
0
-
2
.
0
3
.
0
3
.
0
-
3
.
0
4
.
0
4
.
0
-
4
.
0
.
2
0
.
2
-
0
.
2
0
.
4
0
.
4
-
0
.
4
0
.
6
0
.
6
-
0
.
6
0
.
8
0
.
8
-
0
.
8
S11
Swp Max
3GHz
Swp Min
0.01GHz
S(1,1)
AH212
0
1
.
0
1
.
0
-
1
.
0
1
0
.
0
1
0
.
0
-
1
0
.
0
5
.
0
5
.
0
-
5
.
0
2
.
0
2
.
0
-
2
.
0
3
.
0
3
.
0
-
3
.
0
4
.
0
4
.
0
-
4
.
0
.
2
0
.
2
-
0
.
2
0
.
4
0
.
4
-
0
.
4
0
.
6
0
.
6
-
0
.
6
0
.
8
0
.
8
-
0
.
8
S22
Swp Max
3GHz
Swp Min
0.01GHz
S(2,2)
AH212
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain
will be higher. The impedance plots are shown from 50
–
3000 MHz, with markers placed at 0.5
–
3.0 GHz in 0.5 GHz increment.
S-Parameters for AH212-EG (VCC = +5 V, ICC = 400 mA, T = 25
C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-10.92
-112.71
14.75
95.57
-73.98
47.38
-2.62
-143.22
100
-3.48
-121.92
22.90
70.25
-70.46
9.54
-2.87
-160.44
200
-0.12
-168.99
27.45
14.93
-67.96
94.09
-2.87
-166.36
400
-2.58
163.93
26.41
-53.73
-60.92
47.82
-1.39
-168.43
600
-3.56
147.73
25.52
-62.82
-59.17
67.34
-1.19
-177.07
800
-8.55
125.39
28.69
-95.79
-54.90
49.69
-1.51
179.99
1000
-12.30
-155.14
29.61
-147.37
-55.92
32.50
-1.54
179.91
1200
-5.21
-171.47
28.43
167.21
-55.39
23.93
-1.50
177.74
1400
-4.42
164.06
26.63
132.05
-56.48
3.83
-1.61
175.61
1600
-5.81
140.51
25.16
99.97
-57.72
-6.10
-1.61
173.57
1800
-9.68
118.60
23.77
67.69
-60.00
-86.34
-1.58
171.97
2000
-22.03
121.72
22.15
34.69
-60.00
-166.62
-1.43
169.44
2200
-13.88
-133.74
20.27
2.51
-55.39
157.88
-1.39
166.52
2400
-7.86
-148.71
18.12
-28.03
-50.75
130.86
-1.27
162.89
2600
-5.27
-164.02
16.09
-56.46
-48.64
115.31
-1.27
159.59
2800
-4.10
-176.86
14.35
-85.23
-47.96
96.72
-1.27
156.84
3000
-3.60
174.71
12.79
-117.50
-47.13
90.37
-1.24
154.34
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014
”
F
R
4
,
f
o
u
r
l
a
y
e
r
,
1
o
z
c
o
p
e
r
,
M
i
c
r
o
s
t
r
i
p
l
i
n
e
d
e
t
a
i
l
s
:
w
i
d
t
h
=
.
0
2
6
”
,
s
p
a
c
i
n
g
=
.
0
2
6
”
The silk screen markers
‘
A
’
,
‘
B
’
,
‘
C
’
,
e
t
c
.
a
n
d
‘
1
’
,
‘
2
’
,
‘
3
’
,
e
t
c
.
a
r
e
u
s
e
d
a
s
p
l
a
c
e
m
a
r
k
e
r
s
f
o
r
t
h
e
i
n
p
u
t
a
n
d
o
u
t
p
u
t
u
n
i
n
g
shunt capacitor
–
C7. The markers and vias are spaced in 0.050
”
i
n
c
r
e
m
e
n
t
s
.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AH212EG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH212-EG | 功能描述:射频放大器 1800-2400MHz 26dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH212-EGPCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 27dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGPCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGTR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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