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参数资料
型号： AH212
英文描述： 1 Watt High Linearity, High Gain InGaP HBT Amplifier
中文描述： 1瓦特高线性，高增益的InGaP HBT功率放大器
文件页数： 7/12页
文件大小： 591K
代理商： AH212
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
1960 MHz Application Circuit (AH212-S8PCB1960)
Typical RF Performance at 25
C
Frequency
1960 MHz
Gain
25.8 dB
Input Return Loss
15 dB
Output Return Loss
11 dB
Output P1dB
+30 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
+48.5 dBm
Channel Power
(@-45 dBc ACPR, IS-95, 9 channels fwd)
+23.5 dBm
Noise Figure
5.5 dB
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
CAP
ID=C9
C=47 pF
CAP
ID=C10
C=1000 pF
CAP
ID=C 7
C=2.7 pF
CAP
ID=C2
C=47 pF
CAP
ID=C11
C=4.7E6 pF
CAP
ID=C5
C=1000 pF
IND
ID=L2
L=18 nH
RES
ID=R1
R=10 Ohm
CAP
ID=C8
C=47 pF
CAP
ID=C1
C=47 pF
CAP
ID=C4
C=1000 pF
RES
ID=R3
R=75 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=125 mil
Eeff=4.6
Loss=0
F0=0 M Hz
IND
ID=L1
L=18 nH
CAP
ID=C6
C=1000 pF
RES
ID=R2
R=0 Ohm
1
2
3
4
5
6
7
8
NET="AH212"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
SIZE 1210
C7 is placed between silkscreen marker "2" and "3" on WJ's eval
All passive components are of size 0603
Vcc = +5 V
VBC = +5 V
unless otherwise noted.
Board or @ 14 degrees at 1.96GHz away from pins 6 and 7.
Size 0805
S21 vs. Frequency
23
24
25
26
27
28
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
2
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S11 vs. Frequency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
S
2
(d
B
)
+25
°
C
-40
°
C
+85
°
C
OIP3 vs. Frequency
+25
°
C
,
+
1
5
d
B
m
/
t
o
n
e
35
40
45
50
55
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
O
IP
3
(d
B
m
)
OIP3 vs. Temperature
freq. =1960 MHz, 1961 MHz, +15 dBm/tone
35
40
45
50
55
-40
-15
10
35
60
85
Temperature (
°
C
)
O
IP
3
(d
B
m
)
OIP3 vs. Output Power
freq. =1960 MHz, 1961 MHz, +25
°
C
35
40
45
50
55
12
13
14
15
16
17
18
Output Power (dBm)
O
IP
3
(d
B
m
)
P1dBvs. Frequency
Circuitboardsareoptimizedat1960MHz
26
27
28
29
30
31
1930
1940
1950
1960
1970
1980
1990
Frequency(MHz)
P
1
d
B
(d
B
m
)
-40
°
C
+25
°
C
+85
°
C
Noise Figure vs. Frequency
2
3
4
5
6
7
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
N
F
(d
B
)
-40
°
C
+25
°
C
+85
°
C
ACPRvs. Channel Power
IS-95, 9 Ch. Fwd,
±
8
5
k
H
z
o
f
s
e
t
,
3
0
k
H
z
M
e
a
s
B
W
,
1
9
6
0
M
H
z
-70
-65
-60
-55
-50
-45
-40
18
19
20
21
22
23
24
25
Output Channel Power (dBm)
A
C
P
R
(d
B
c
)
-40 C
+25 C
+85 C
5
6
7
8
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AH212-EG 功能描述:射频放大器 1800-2400MHz 26dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
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AH212-EGPCB2140 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
AH212-EGTR 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER
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