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参数资料
| 型号： | AH212 |
| 英文描述： | 1 Watt High Linearity, High Gain InGaP HBT Amplifier |
| 中文描述： | 1瓦特高线性，高增益的InGaP HBT功率放大器 |
| 文件页数： | 10/12页 |
| 文件大小： | 591K |
| 代理商： | AH212 |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 7 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
AH212-S8 2350 MHz Reference Design for WiBro Applications
Typical RF Performance at 25
C
Frequency (MHz)
2300
2350
2400
Gain (dB)
24.5
24.4
24.3
Input Return Loss (dB)
10
Output Return Loss (dB)
7.5
7
6.5
Output P1dB (dBm)
+30.4
+30
+29.6
Output IP3 (dBm)
(+15 dBm / tone, 1 MHz spacing)
+45
+44.3
+43.7
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
CAP
ID=C9
C=22 pF
CAP
ID=C10
C=1000 pF
CAP
ID=C7
C=2.2 pF
CAP
ID=C2
C=6.8 pF
CAP
ID=C11
C=4.7E6 pF
CAP
ID=C5
C=1000 pF
IND
ID=L2
L=15 nH
RES
ID=R1
R=20 Ohm
CAP
ID=C8
C=22 pF
CAP
ID=C1
C=22 pF
CAP
ID=C4
C=1000 pF
RES
ID=R3
R=75 Ohm
IND
ID=L1
L=12 nH
CAP
ID=C6
C=1000 pF
RES
ID=R2
R=0 Ohm
CAP
ID=C12
C=1.5 pF
1
2
3
4
5
6
7
8
NET="AH212"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
SIZE 1210
C7 is placed at silkscreen marker "1" on WJ's eval
All passive components are of size 0603
Vcc = +5 V
VBC = +5 V
unless otherwise noted.
Board or @ 4.2 degrees at 2.35 GHz away from pin 6 and 7.
Size 0805
C12 is placed at silkscreen marker "A" on WJ's eval
Board or @ 4.2 degrees at 2.35 GHz away from pin 3.
S21 vs. Frequency
21
22
23
24
25
26
2300
2320
2340
2360
2380
2400
Frequency (MHz)
S
2
1
(d
B
)
S11 vs. Frequency
-25
-20
-15
-10
-5
0
2300
2320
2340
2360
2380
2400
Frequency (MHz)
S
1
(d
B
)
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2300
2320
2340
2360
2380
2400
Frequency (MHz)
S
2
(d
B
)
OIP3 vs. Frequency
+25
°
C
,
+
1
5
d
B
m
/
t
o
n
e
35
40
45
50
55
2300
2320
2340
2360
2380
2400
Frequency (MHz)
O
IP
3
(d
B
m
)
P1dB vs. Frequency
26
27
28
29
30
31
2300
2320
2340
2360
2380
2400
Frequency (MHz)
P
1
d
B
(d
B
m
)
7
8
6
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AH212EG | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
| AH212-EG | 功能描述:射频放大器 1800-2400MHz 26dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AH212-EGPCB1960 | 功能描述:射频开发工具 1960MHz Eval Brd 27dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGPCB2140 | 功能描述:射频开发工具 2140MHz Eval Brd 25.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AH212-EGTR | 制造商:TriQuint Semiconductor 功能描述:RF & MW DRIVER AMPLIFIER |
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