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参数资料
型号： AH212
英文描述： 1 Watt High Linearity, High Gain InGaP HBT Amplifier
中文描述： 1瓦特高线性，高增益的InGaP HBT功率放大器
文件页数： 9/12页
文件大小： 591K
代理商： AH212
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 6 of 12 August 2006
AH212
1 Watt High Linearity, High Gain InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2140 MHz Application Circuit (AH212-S8PCB2140)
Typical RF Performance at 25
C
Frequency
2140 MHz
Gain
25 dB
Input Return Loss
25 dB
Output Return Loss
9 dB
Output P1dB
+29.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
+46 dBm
Channel Power
(@-45 dBc ACLR, W-CDMA, Test model
1 +64 DPCH,
±
5
M
H
z
o
f
s
e
t
)
+21 dBm
Noise Figure
6 dB
Device / Supply Voltage
+5 V
Quiescent Current
400 mA
CAP
ID=C1
C=47 pF
C AP
ID =C 2
C =47 pF
CAP
ID=C4
C=1000 pF
CAP
ID=C5
C=1000 pF
C AP
ID=C 7
C =2.4 pF
CAP
ID=C6
C=1000 p F
CAP
ID =C8
C=47 pF
CAP
ID=C9
C=47 pF
CAP
ID =C 10
C=1000 pF
CAP
ID=C11
C=4.7E6 pF
IN D
ID =L1
L=18 nH
IND
ID=L2
L=18 nH
RES
ID=R2
R=0 Ohm
RES
ID=R1
R=10 Ohm
RES
ID=R3
R=75 Ohm
TLINP
ID=TL1
Z0=50 Ohm
L=110 mil
Eeff=4.6
Loss=0
F0=0 MH z
1
2
3
4
5
6
7
8
NET="AH 212"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
VBC = +5 V
unless otherwise noted.
or @ 12.2 deg at 2.14GHZ away from pins 6 and 7.
SIZ E 1210
C7 is placed at silkscreen marker "2" on WJ's eval board
All passive components are of size 0603
Vcc = +5 V
Size 0805
S21 vs. Frequency
22
23
24
25
26
27
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
2
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S11 vs. Frequency
-35
-30
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
1
(d
B
)
+25
°
C
-40
°
C
+85
°
C
S22 vs. Frequency
-25
-20
-15
-10
-5
0
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
S
2
(d
B
)
+25
°
C
-40
°
C
+85
°
C
OIP3 vs. Frequency
+25
°
C
,
+
1
5
d
B
m
/
t
o
n
e
35
40
45
50
55
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
O
IP
3
(d
B
m
)
OIP3 vs. Temperature
freq. =2140 MHz, 2141 MHz, +15 dBm/tone
35
40
45
50
55
-40
-15
10
35
60
85
Temperature (
°
C
)
O
IP
3
(d
B
m
)
OIP3vs. OutputPower
freq.=2140MHz,2141MHz, +25
°
C
35
40
45
50
55
12
13
14
15
16
17
18
OutputPower(dBm)
O
IP
3
(d
B
m
)
P1dBvs. Frequency
Circuit boards are optimized at 2140 MHz
25
26
27
28
29
30
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
P
1
d
B
(d
B
m
)
-40
°
C
+25
°
C
+85
°
C
Noise Figure vs. Frequency
3
4
5
6
7
8
2110
2120
2130
2140
2150
2160
2170
Frequency (MHz)
N
F
(d
B
)
-40
°
C
+25
°
C
+85
°
C
ACLRvs. Channel Power
3GPPW-CDMA, Test Model 1+64 DPCH,
±
5
M
H
z
o
f
s
e
t
,
2
1
4
0
M
H
z
-60
-55
-50
-45
-40
18
19
20
21
22
Output Channel Power (dBm)
A
C
L
R
(d
B
c
)
-40 C
+25 C
+85 C
5
6
7
8
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