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参数资料
| 型号： | AH31 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 50 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | TO-243C, SOT-89, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 486K |
| 代理商： | AH31 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 5 of 8 June 2005
AH31
High Dynamic Range IF Amplifier
Product Information
The Communications Edge TM
Application Circuit: 450 – 550 MHz (AH31-PCB500)
Typical Performance
Frequency
500 MHz
Gain
18.4 dB
S11
-12.7 dB
S22
-9.2 dB
Output P1dB
+21 dBm
Output IP3
+41 dBm
Noise Figure
1.9 dB
Bias
+5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1, C2, and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
15
16
17
18
19
450
475
500
525
550
Frequency (MHz)
G
a
in
(d
B
)
-20
-15
-10
-5
0
S
1
,
S
2
(d
B
)
S11
S22
S21
Noise Figure
0.0
0.5
1.0
1.5
2.0
2.5
450
475
500
525
550
Frequency (MHz)
N
o
is
e
F
ig
u
re
(d
B
)
Output IP3
36
38
40
42
44
46
450
475
500
525
550
Output IP3 (dBm)
F
re
q
u
e
n
c
y
(M
H
z
)
Reference Design: 900 MHz
Typical Performance
Frequency
900 MHz
S21 - Gain
16.6 dB
S11
-14 dB
S22
-9 dB
Output P1dB
+20 dBm
Output IP3
+41 dBm
Noise Figure
2.2 dB
Bias
5 V @ 150 mA
Notes:
1. The amplifier should be connected directly to a +5 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate is internally grounded in the amplifier.
3. R1 and C3 (from the silkscreen) are not utilized in this application circuit.
S-Parameters
13
14
15
16
17
800
850
900
950
1000
Frequency (MHz)
G
a
in
(d
B
)
-20
-15
-10
-5
0
S
1
,
S
2
(d
B
)
S11
S22
S21
Noise Figure
0.0
0.5
1.0
1.5
2.0
2.5
800
850
900
950
1000
Frequency (MHz)
N
o
is
e
F
ig
u
re
(d
B
)
AH31
RF OUT
VS = +5 V
C5
.018
F
L1
22 nH
C4
1000 pF
L2
150 nH
RF IN
C1
1000 pF
R2
8.2
AH31
RF
VS = +5 V
C5
.01
F
C6
100 pF
L2
39 nH
L1
12 nH
C4
100 pF
RF IN
C2
2.4 pF
C1
100 pF
R2
10
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