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| 型号： | ALD1101BPAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 13.2V 40MA 8PDIP |
| 标准包装： | 50 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 13.2V |
| 电流 - 连续漏极(Id) @ 25° C： | 40mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 10µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
A DVANCED
L INEAR
D EVICES, I NC.
GENERAL DESCRIPTION
DUAL N-CHANNEL MATCHED MOSFET PAIR
APPLICATIONS
ALD1101A/ALD1101B
ALD1101
The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1101 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
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Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
PIN CONFIGURATION
The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
SOURCE 1
GATE 1
1
2
8
7
SUBSTRATE
SOURCE 2
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
DRAIN 1
3
6
GATE 2
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25 ° C is = 5mA/50pA = 100,000,000.
IC
4
5
DRAIN 2
TOP VIEW
FEATURES
? Low threshold voltage of 0.7V
? Low input capacitance
? Low Vos grades -- 2mV, 5mV, 10mV
? High input impedance -- 10 12 ? typical
? Negative current (I DS ) temperature coefficient
? Enhancement-mode (normally off)
? DC current gain 10 9
? RoHS compliant
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
SAL, PAL, DA PACKAGES
* IC pin is internally connected. Do not connect externally.
BLOCK DIAGRAM
GATE 1 (2)
0 ° C to +70 ° C
0 ° C to +70 ° C -55 ° C to +125 ° C
DRAIN 1 (3)
SOURCE 1 (1)
SUBSTRATE (8)
8-Pin
8-Pin
8-Pin
Small Outline
Plastic Dip
CERDIP
DRAIN 2 (5)
SOURCE 2 (7)
Package (SOIC)
ALD1101ASAL
ALD1101BSAL
ALD1101SAL
Package
ALD1101APAL
ALD1101BPAL
ALD1101PAL
Package
ALD1101DA
GATE 2 (6)
* Contact factory for leaded (non-RoHS) or high temperature versions.
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| ALD1102BPAL | MOSFET 2P-CH 13.2V 16MA 8PDIP |
| ALD1103PBL | MOSFET 2N+2P 13.2V 14PDIP |
| ALD1105PBL | MOSFET 2N+2P 13.2V 14PDIP |
| ALD1106SBL | MOSFET 4N-CH 13.2V QUAD 14SOIC |
| ALD1107SBL | MOSFET 4P-CH 13.2V QUAD 14SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1101BSAL | 功能描述:MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1101DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL MATCHED MOSFET PAIR |
| ALD1101MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 13.2V V(BR)DSS | TO-99 |
| ALD1101PA | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1101PAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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