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参数资料
| 型号： | ALD1102DA |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | DUAL P-CHANNEL MATCHED MOSFET PAIR |
| 中文描述： | 双P沟道MOSFET的一对匹配 |
| 文件页数： | 1/4页 |
| 文件大小： | 27K |
| 代理商： | ALD1102DA |
GENERAL DESCRIPTION
The ALD1102 is a monolithic dual P-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-
mode transistors are manufactured with Advanced Linear Devices' en-
hanced ACMOS silicon gate CMOS process.
The ALD1102 offers high input impedance and negative current tempera-
ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite) current
gain in a low frequency, or near DC operating environment. When used
with an ALD1101, a dual CMOS analog switch can be constructed. In
addition, the ALD1102 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.
The ALD1102 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25
°C is = 5mA/50pA = 100,000,000.
FEATURES
Low threshold voltage of 0.7V
Low input capacitance
Low Vos grades -- 2mV, 5mV, 10mV
High input impedance -- 1012
typical
Low input and output leakage currents
Negative current (IDS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 109
APPLICATIONS
Precision current mirrors
Precision current sources
Analog switches
Choppers
Differential amplifier
input stage
Voltage comparator
Data converters
Sample and Hold
Analog inverter
ADVANCED
LINEAR
DEVICES, INC.
DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1102A/ALD1102B
ALD1102
Operating Temperature Range*
-55
°C to +125°C0°C to +70°C0°C to +70°C
8-Pin
CERDIP
Plastic Dip
SOIC
Package
ALD1102A PA
ALD1102B PA
ALD1102 DA
ALD1102 PA
ALD1102 SA
* Contact factory for industrial temperature range.
ORDERING INFORMATION
PIN CONFIGURATION
1
2
3
4
8
7
6
5
SOURCE 1
GATE 1
DRAIN 1
NC
SUBSTRATE
SOURCE 2
GATE 2
DRAIN 2
TOP VIEW
DA, PA, SA PACKAGE
SOURCE 1 (1)
SUBSTRATE (8)
SOURCE 2 (7)
GATE 2 (6)
DRAIN 1 (3)
GATE 1 (2)
DRAIN 2 (5)
BLOCK DIAGRAM
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| ALD1102PA | DUAL P-CHANNEL MATCHED MOSFET PAIR |
| ALD1102SA | Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No |
| ALD1103 | JT 21C 21#16 SKT GRND PLUG |
| ALD1110EDA | QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩) |
| ALD1116SA | TRANS NPN LF 60VCEO 4A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1102MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 13.2V V(BR)DSS | TO-99 |
| ALD1102PA | 功能描述:MOSFET Dual P-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1102PAL | 功能描述:MOSFET Dual P-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1102SA | 功能描述:MOSFET Dual P-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1102SAL | 功能描述:MOSFET Dual P-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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