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参数资料
| 型号： | ALD1116SA |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | TRANS NPN LF 60VCEO 4A TO-220F |
| 中文描述： | 四/双N沟道MOSFET的阵列匹配 |
| 文件页数： | 1/4页 |
| 文件大小： | 34K |
| 代理商： | ALD1116SA |
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-
ment mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for switching and amplifying applications
in +2V to +12V systems where low input bias current, low input capacitance
and fast switching speed are desired. These MOSFET devices feature very
large (almost infinite) current gain in a low frequency, or near DC, operating
environment. The ALD1106/ALD1116 are building blocks for differential
amplifier input stages, transmission gates, and multiplexer applications,
current sources and many precision analog circuits.
ADVANCED
LINEAR
DEVICES, INC.
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1106/ALD1116
APPLICATIONS
Precision current mirrors
Precision current sources
Voltage choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog signal processing
BLOCK DIAGRAM
FEATURES
Low threshold voltage of 0.7V
Low input capacitance
Low Vos 2mV typical
High input impedance -- 1014
typical
Negative current (IDS) temperature coefficient
Enhancement-mode (normally off)
DC current gain 109
Low input and output leakage currents
PIN CONFIGURATION
DN2
GN2
SN2
GN1
SN1
1
2
3
4
DA, PA, SA PACKAGE
5
6
7
8
DN1
V+
V-
ALD1116
DN1 (1)
DN2 (8)
~
GN1 (2)
SN1 (3)
SN2 (6)
V+ (5)
V- (4)
GN2 (7)
ALD1116
Operating Temperature Range*
-55
°C to +125°C0°C to +70°C0°C to +70°C
8-Pin CERDIP
8-Pin Plastic Dip
8-Pin SOIC
Package
ALD1116 DA
ALD1116 PA
ALD1116 SA
14-Pin CERDIP
14-Pin Plastic Dip
14-Pin SOIC
Package
ALD1106 DB
ALD1106 PB
ALD1106 SB
ORDERING INFORMATION
* Contact factory for industrial temperature range.
BLOCK DIAGRAM
DN1 (1)
DN2 (14)
GN1 (2)
SN1 (3)
SN2 (12)
V- (4)
GN2 (13)
DN3 (10)
DN4 (5)
GN3 (9)
SN3 (8)
SN4 (7)
~
V+ (11)
V- (4)
GN4 (6)
ALD1106
DN2
GN2
SN2
GN3
SN3
GN1
SN1
DN4
GN4
1
2
3
4
DB, PB, SB PACKAGE
5
6
7
8
9
10
11
12
13
14
DN1
V+
V-
DN3
SN4
1
ALD1106
1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1116SAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
| ALD1117DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY |
| ALD1117PA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117PAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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