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参数资料
| 型号： | ALD1123EDC |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/双EPAD精密配对N沟道MOSFET阵列 |
| 文件页数： | 1/8页 |
| 文件大小： | 55K |
| 代理商： | ALD1123EDC |
FEATURES
Electrically Programmable Analog Device
CMOS Technology
Operates from 2V, 3V, 5V to 10V
Flexible basic circuit building block and design element
Very high resolution -- average e-trim voltage
resolution of 0.1mV
Wide dynamic range -- current levels from 0.1
A
to 3000
A
Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
Proven, non-volatile CMOS technology
Typical 10 years drift of less than 2mV
Usable in voltage mode or current mode
High input impedance -- 1012
Very high DC current gain -- greater than 109
Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68
A
Tight matching and tracking of on-resistance
between different devices with e-trim
Wide dynamic resistance matching range
Very low input currents and leakage currents
Low cost, monolithic technology
Application-specific or in-system programming modes
Optional user software-controlled automation
Optional e-trim of any standard/custom configuration
Micropower operation
Available in standard PDIP, SOIC and hermetic CDIP packages
Suitable for matched-pair balanced circuit configuration
Suitable for both coarse and fine trimming as well as matched
MOSFET array applications
QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY
ADVANCED
LINEAR
DEVICES, INC.
ALD1123E/ALD1121E
BENEFITS
Precision matched electrically after packaging
Simple, elegant single-chip user option
to trimming voltage/current values
Excellent device matching characteristics with
or without additional electrical trim
Remotely and electrically trim parameters on
circuits that are physically inaccessible
Usable in environmentally sealed circuits
No mechanical moving parts -- high G-shock
tolerance
Improved reliability, dependability, dust and
moisture resistance
Cost and labor savings
Small footprint for high board density
applications
PIN CONFIGURATION
Operating Temperature Range*
0
°C to +70°C0°C to +70°C
8-Pin
Plastic Dip
SOIC
Package
ALD1121E PA
ALD1121E SA
Operating Temperature Range*
0
°C to +70°C0°C to +70°C
16-Pin
Plastic Dip
SOIC
Package
ALD1123E PC
ALD1123E SC
ORDERING INFORMATION
* Contact factory for industrial temperature range
2003 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com
1
2
3
6
7
8
4
5
GN1
DN1
SN2
DN2
DA, PA, SA PACKAGE
ALD1121E
SN1,V-
GN2
PN2
PN1
M 1
M 2
SN2
1
2
3
14
15
16
4
13
5
12
PN3
6
7
8
10
11
GN1
DN1
PN1
GN4
V-2, SN4
DN4
9
GN3
DN3
GN2
DN2
DC, PC, SC PACKAGE
PN2
SN3
V-1, SN1
PN4
ALD1123E
M 1
M 2
M 4
M 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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