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参数资料
| 型号： | ALD1123EDC |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/双EPAD精密配对N沟道MOSFET阵列 |
| 文件页数： | 6/8页 |
| 文件大小： | 55K |
| 代理商： | ALD1123EDC |
ALD1123E/ALD1121E
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
12
10
8
6
4
2
LOW
LEVEL
OUTPUT
CONDUCTANCE(
A/V)
AMBIENT TEMPERATURE (
°C)
-50
-25
0
25
50
125
100
75
VGS = Vt + 0.5V
VDS = 5.0V
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
100
80
70
HIGH
LEVEL
OUTPUT
CONDUCTANCE
(mA/V)
-50
-25
0
25
50
125
100
75
AMBIENT TEMPERATURE (
°C)
90
60
40
50
VGS = Vt + 4.0V
VDS = 5.0V
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
THRESHOLD VOTAGE (V)
10
5
0
LOW
LEVEL
CURRENT
OUTPUT
CONDUCTANCE
(
A/V)
0.5
1.0
1.5
2.0
3.0
3.5
2.5
0
TA = +25°C
VGS = Vt + 0.5V
VDS = 5.0V
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE
(mA/V)
AMBIENT TEMPERATURE (
°C)
-50
-25
0
25
50
125
100
75
2.5
2.0
1.5
1.0
0
0.5
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
4.0
3.0
2.0
0
THRESHOLD
VOTAGE
(V)
AMBIENT TEMPERATURE (
°C)
-50
-25
0
25
50
125
100
75
1.0
VDS = VGS ID = 1.0A
Vt = 1.0V
Vt = 1.5V
Vt = 2.0V
Vt = 2.5V
Vt = 3.0V
DRAIN OFF LEAKAGE CURRENT IDS
vs. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (
°C)
-50
-25
0
25
50
125
100
75
500
400
DRAIN
OFF
LEAKAGE
CURRENT
(pA)
300
200
600
100
0
IDS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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