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参数资料
| 型号： | ALD1123EDC |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/双EPAD精密配对N沟道MOSFET阵列 |
| 文件页数： | 5/8页 |
| 文件大小： | 55K |
| 代理商： | ALD1123EDC |
ALD1123E/ALD1121E
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE (V)
02
46
10
12
8
20
15
10
5
0
DRAIN
SOURCE
ON
CURRENT
(mA)
TA = +25°C
VGS = +12V
VGS = + 2V
VGS = + 4V
VGS = + 6V
VGS = + 8V
VGS = +10V
OUTPUT CHARACTERISTICS
-200 -160 -120 -80 -40
+200
+1.0
0
40
80 120 160
DRAIN SOURCE VOLTAGE (mV)
DRAIN
SOURCE
ON
CURRENT
(mA)
-1.0
VGS = +12V
VGS = +6V
VGS = +8V
VGS = +10V
TA = +25°C
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
2.0
1.5
1.0
5.0
TRANSCONDUCTANCE
(mA/V)
TA = +25°C
0
VGS = Vt + 4.0V
VDS = 10V
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
75
70
60
50
HIGH
LEVEL
OUTPUT
CONDUCTANCE
(
A/V)
TA = +25°C
VGS = Vt + 4.0V
VDS = 5.0V
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0
0.5
1.0
1.5
2.0
3.0
3.5
2.5
TA = +25°C
VDS = +5.0V
DRAIN
SOURCE
ON
CURRENT
(mA)
3.0
2.0
1.0
0
VGS = +5V
VGS = +1V
VGS = +2V
VGS = +3V
VGS = +4V
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
6
5
4
3
2
1
0
AMBIENT TEMPERATURE (
°C)
-50
-25
0
25
50
75
100
125
DRAIN
SOURCE
ON
CURRENT
(mA)
VG = 5V
Vt = 1.0V
Vt = 1.5V
Vt = 3.0V
Vt = 2.0V
Vt = 2.5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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