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参数资料
| 型号： | ALD1123EDC |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/双EPAD精密配对N沟道MOSFET阵列 |
| 文件页数： | 3/8页 |
| 文件大小： | 55K |
| 代理商： | ALD1123EDC |
ALD1123E/ALD1121E
Advanced Linear Devices
3
Drain to Source Voltage 1
VDS
10.0
V
Initial Threshold Voltage
2
V ti
0.990
1.000
1.010
0.990
1.000
1.010
V
IDS = 1A TA = 21°C
E-trim Vt Range
V t
1.000
3.000
1.000
3.000
V
Drain - Gate Connected
TCVDS
-1.6
mV/
°CID = 5A
Voltage Tempco
-0.3
mV/
°CID = 50A
0.0
mV/
°CID = 68A
+2.7
mV/
°CID = 500A
Initial Offset Voltage 3
VOS i
15
1
5
mV
Tempco of VOS
TCVOS
55
V/°CVDS1 = VDS2
Differential Threshold Voltage
4
DV t
2.000
V
Tempco of Differential
Threshold Voltage
4
TCDV t
0.033
mV/
°C
Long Term Drift
Vt /t
-0.02
-0.05
-0.02
-0.05
mV
1000 Hours
Long Term Drift Match
Vt /t-5
-5
V
1000 Hours
Drain Source On Current
IDS(ON)
3.0
mA
VG =VD = 5V VS = 0V
Vt = 1.0
Drain Source On Current 4
IDS(ON)
0.8
mA
VG =VD = 5V VS = 0V
Vt = 3.0
Initial Zero Tempco Voltage 3
VZTCi
1.52
V
Vt = 1.000V
Zero Tempco Current
IZTC
68
A
Initial On-Resistance 3
RON i
500
VGS = 5V VDS = 0.1V
On-Resistance Match
RON
0.5
%
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to V-
-0.3V to +13.2V
Supply voltage, VS referenced to V-
±6.6V
Differential input voltage range
0.3V to V+ +0.3V
Power dissipation
600 mW
Operating temperature range PA, SA, PC, SC package
0
°C to +70°C
DA, DC package
-55
°C to +125°C
Storage temperature range
-65
°C to +150°C
Lead temperature, 10 seconds
+260
°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1123E
ALD1121E
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
NOTES:
1. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at
any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when Vt of one or more of the devices are to be changed by user.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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