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参数资料
| 型号： | ALD1123EDC |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
| 中文描述： | 四/双EPAD精密配对N沟道MOSFET阵列 |
| 文件页数： | 7/8页 |
| 文件大小： | 55K |
| 代理商： | ALD1123EDC |
ALD1123E/ALD1121E
Advanced Linear Devices
7
TYPICAL PERFORMANCE CHARACTERISTICS
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
+10
+8
+6
+4
+2
-2
0
-10
CHANGE
IN
DIFFERENTIAL
THRESHOLDVOLTAGE
(mV)
-50
-25
0
25
50
125
100
75
AMBIENT TEMPERATURE (
°C)
-8
-6
-4
REPRESENTATIVE UNITS
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN SOURCE ON CURRENT (
A)
5
4
3
2
1
0
GATE
SOURCE
VOLTAGE
(V)
0.1
1
100
10
1000
10000
VDS = 0.5V
TA = +125°C
VDS = 0.5V
TA = +25°C
VDS = 5V
TA = +25°C
VDS = 5V
TA = +125°C
VDS
IDS(ON)
D
VGS
S
VDS = RON IDS(ON)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
5
4
3
2
1
0
DRAIN
SOURCE
ON
CURRENT
(mA)
5
4
3
2
1
0
70
°C
125
°C
-25
°C
0
°C
-55
°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
100
50
0
1.8
1.0
1.2
2.0
1.6
1.4
DRAIN
SOURCE
ON
CURRENT
(
A)
Zero Temperature
Coefficient (ZTC)
{
Vt
= 1.2V
Vt
= 1.4V
Vt
= 1.0V
- 25
°C
- 25
°C
- 25
°C
ZTC
125
°C
125
°C
ZTC
125
°C
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
4
3
2
1
0
5
4
3
2
1
0
TA = -55°C
TA = +50°C
DRAIN
SOURCE
ON
CURRENT
(mA)
OUTPUT VOLTAGE (V)
TA = 0°C
Vt = 1.000V
VDS = VGS
TA = +125°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
ON - RESISTANCE (K
)
0.1
1.0
100
10
1000
10000
DRAIN
SOURCE
ON
CURRENT,
BIAS
CURRENT
(
A)
0.1
1.0
100
10
1000
10000
VDS = RON IDS(ON)
VGS = +0.9V to +5.0V
VDS = 5.0V
VDS = 0.5V
VDS
D
VGS
S
IDS(ON)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1123EPC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123EPCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESC | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1123ESCL | 功能描述:MOSFET Quad EPAD(R) N-Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112T | 制造商:Panasonic Electric Works 功能描述: |
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