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参数资料
| 型号： | ALD1116SA |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | TRANS NPN LF 60VCEO 4A TO-220F |
| 中文描述： | 四/双N沟道MOSFET的阵列匹配 |
| 文件页数： | 3/4页 |
| 文件大小： | 34K |
| 代理商： | ALD1116SA |
ALD1106/ALD1116
Advanced Linear Devices
3
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN
SOURCE
CURRENT
(mA)
20
15
10
0
5
VBS = 0V
TA = 25°C
VGS = 12V
10V
8V
6V
4V
2V
DRAIN SOURCE VOLTAGE (V)
02
4
6
8
10
12
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE VOLTAGE (mV)
DRAIN
SOURCE
CURRENT
(
A)
-160
-80
0
80
160
-1000
1000
500
0
-500
4V
VGS = 12V
6V
VBS = 0V
TA = 25°C
2V
GATE SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN
SOURCE
CURRENT
(
A)
20
15
10
5
0
0.8
1.6
2.4
3.2
4.0
VBS = 0V
-2V
-4V
-6V
-8V
-10V
-12V
VGS = VDS
TA = 25°C
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
DRAIN
SOURCE
ON
RESISTANCE
(K
)
100
10
1
0.1
2
0
4
6
8
10
12
VDS = 0.2V
VBS = 0V
TA = +25°C
TA = +125°C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (
°C)
OFF
DRAIN
SOURCE
CURRENT
(pA)
-50
-25
+25
+50
+75
+125
+100
0
VDS = +12V
VGS = VBS = 0V
1
10
100
1000
FORWARD
TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (V)
20
10
2
1
0.5
5
0.2
02
4
6
8
10
12
IDS = 1mA
TA = +25°C
IDS = 10mA
TA = +125°C
VBS = 0V
f = 1KHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1116SAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
| ALD1117DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY |
| ALD1117PA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117PAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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