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参数资料
| 型号： | ALD1116SA |
| 厂商： | Advanced Linear Devices, Inc. |
| 英文描述： | TRANS NPN LF 60VCEO 4A TO-220F |
| 中文描述： | 四/双N沟道MOSFET的阵列匹配 |
| 文件页数： | 2/4页 |
| 文件大小： | 34K |
| 代理商： | ALD1116SA |
ALD1106/ALD1116
Advanced Linear Devices
2
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
13.2V
Gate-source voltage, VGS
13.2V
Power dissipation
500 mW
Operating temperature range
PA, SA, PB, SB package
0
°C to +70°C
DA, DB package
-55
°C to +125°C
Storage temperature range
-65
°C to +150°C
Lead temperature, 10 seconds
+260
°C
Gate Threshold
VT
0.4
0.7
1.0
0.4
0.7
1.0
V
IDS = 1.0A VGS = VDS
Voltage
Offset Voltage
VOS
2
10
2
10
mV
IDS = 10A VGS = VDS
VGS1-VGS2
Gate Threshold
Temperature
TCVT
-1.2
mV/
°C
Drift 2
On Drain
IDS (ON)
3.0
4.8
3.0
4.8
mA
VGS = VDS = 5V
Current
Transconductance
GIS
1.0
1.8
1.0
1.8
mmho VDS = 5V IDS= 10mA
Mismatch
Gfs
0.5
%
Output
GOS
200
mho VDS = 5V IDS = 10mA
Conductance
Drain Source
RDS (ON)
350
500
350
500
VDS = 0.1V VGS = 5V
On Resistance
Drain Source
On Resistence
DS (ON)
0.5
%
VDS = 0.1V VGS = 5V
Mismatch
Drain Source
Breakdown
BVDSS
12
V
IDS = 1.0A VGS = 0V
Voltage
Off Drain
IDS (OFF)
10
400
10
400
pA
VDS =12V VGS = 0V
Current 1
44
nA
TA = 125°C
Gate Leakage
IGSS
0.1
10
0.1
10
pA
VDS = 0V VGS = 12V
Current
1
nA
TA = 125°C
Input
CISS
13
1
3
pF
Capacitance 2
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
ALD1106
ALD1116
Test
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1116SAL | 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
| ALD1117DA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY |
| ALD1117PA | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1117PAL | 功能描述:MOSFET Dual P-Channel Array RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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