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参数资料
| 型号： | ALD110804PCL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V QUAD 16PDIP |
| 标准包装： | 25 |
| 系列： | EPAD® |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 4.4V |
| Id 时的 Vgs(th)（最大）： | 420mV @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
| 其它名称： | 1014-1022 |
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
5
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
1.6
TRANSFER CHARACTERISTICS
2.5
-55 ° C ≤ T A ≤ +125 ° C
1.2
T A = 25 ° C
V DS = +10V
VGS(TH) = -0.4V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
0
-2.5
-5
0.8
0.4
0.0
V GS(TH) = 0.0 V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
VGS(TH) = +0.8V
1
10
100
1000
-4
-2
0
2
4
6
8
10
DRAIN SOURCE ON CURRENT ( μ A)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD CHARACTERISTICS
0.6
VGS(TH)=-3.5V
2.5
2.0
0.5
VGS(TH)=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
1.5
0.3
1.0
0.5
25 ° C
V GS(th) = 0.4V
0.2
0.0
0.0
-0.5
55 ° C
V GS(th) = 0.2 V
0.1
0.2
0.5
1.0
2.0
5.0
100000 10000
1000
100
10
1
0.1
1.2
0.9
0.6
0.3
DRAIN-SOURCE ON VOLTAGE (V)
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
T A = 25 ° C
V DS = +10V
4.0
3.0
2.0
1.0
DRAIN -SOURCE CURRENT (nA)
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
V DS = +0.1V I D = 1.0 μ A
V t = 1.4V
0.0
0
V t = 0.0V
V t = 0.2V
V t = 0.8V
V t = 0.4V
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
DRAIN -SOURCE ON CURRENT(mA)
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
AMBIENT TEMPERATURE ( ° C)
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
0.3
0.2
0.1
0
-0.1
V D = 0.1V
25 ° C
2.0
1.0
0.0
-1.0
-2.0
VGS(th) = 0.0V
VGS(th) = -0.4V
VGS(th) = -1.3V
IDS = +1 μ A
VDS = +0.1V
-0.2
-0.3
55 ° C
-3.0
-0.4
-4.0
VGS(th) = -3.5V
10000
1000
100
10
1
0.1
-25
25
75
125
DRAIN-SOURCE CURRENT (nA)
AMBIENT TEMPERATURE ( O C)
ALD110804/ALD110904
Advanced Linear Devices
7 of 11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD110804SC | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110804SCL | 功能描述:MOSFET Quad N-Channel EPAD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110808 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110808_12 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY |
| ALD110808A | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
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