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| 型号： | ALD1115MAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 13.2V 8MSOP |
| 标准包装： | 50 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 13.2V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8mA，2mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
A DVANCED
L INEAR
D EVICES, I NC.
COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ALD1115
GENERAL DESCRIPTION
APPLICATIONS
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of
a N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
The ALD1115 offers high input impedance and negative current
temperature coefficient. The transistor pair is designed for precision
signal switching and amplifying applications in +1V to +12V systems
where low input bias current, low input capacitance and fast switching
speed are desired. Since these are MOSFET devices, they feature very
large (almost infinite) current gain in a low frequency, or near DC,
operating environment. When connected in parallel with sources, drains
and gates connected together, a CMOS analog switch can be constructed.
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Precision current mirrors
Complementary push-pull linear drives
Discrete analog switches
Analog signal choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog current inverter
Precision matched current sources
CMOS inverter stage
Diode clamps
Source followers
In addition, the ALD1115 is intended as a building block for CMOS
inverters, differential amplifier input stages, transmission gates, and
multiplexer applications.
PIN CONFIGURATION
The ALD1115 is suitable for use in precision applications which require
SN
1
8
V +
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
GN
2
7
DP
transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which
DN
3
6
GP
is specified at 30pA at room temperature. V+ is connected to the
substrate, which is the most positive voltage potential of the ALD1115,
V -
4
5
SP
usually SP (5). Similarly, V- is connected to the most negative voltage
potential of the ALD1115, usually SN (1).
FEATURES
? Thermal tracking between N-channel and P-channel
? Low threshold voltage of 0.7V for both N-channel
and P-channel MOSFETs
? Low input capacitance
? High input impedance -- 10 13 ? typical
? Low input and output leakage currents
? Negative current (I DS ) temperature coefficient
? Enhancement mode (normally off)
? DC current gain 10 9
TOP VIEW
SAL, PAL PACKAGES
BLOCK DIAGRAM
GN (2)
? Single N-channel MOSFET and single P-channel
MOSFET in one package
ORDERING INFORMATION ("L"suffix for lead free version)
Operating Temperature Range*
0 ° C to +70 ° C 0 ° C to +70 ° C
8-Pin
8-Pin
DN (3)
GP (6)
SN (1)
V- (4)
SOIC
Package
Plastic Dip
Package
DP (7)
SP (5)
V+ (8)
ALD1115SAL
ALD1115PAL
* Contact factory for leaded (non-RoHS) or high temperature versions.
Rev 2.0 ?2011 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1115PA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET |
| ALD1115PAL | 功能描述:MOSFET Comp N-Channel & P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1115SA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET |
| ALD1115SAL | 功能描述:MOSFET Comp N-Channel & P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD1116 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET |
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