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| 型号： | ALD110902SAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 10.6V DUAL 8SOIC |
| 产品目录绘图： | 8-Pin SOIC Package |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 12mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 4.2V |
| Id 时的 Vgs(th)（最大）： | 220mV @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 其它名称： | 1014-1035 |
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EPAD
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E N
ALD110802/ALD110902
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD?
PRECISION MATCHED PAIR MOSFET ARRAY
VGS(th)= +0.20V
GENERAL DESCRIPTION
ALD110802/ALD110902 are high precision monolithic quad/dual enhance-
ment mode N-Channel MOSFETS matched at the factory using ALD’s
proven EPAD? CMOS technology. These devices are intended for low volt-
age, small signal applications. The ALD110802/ALD110902 MOSFETS are
designed and built for exceptional device electrical characteristics match-
ing. Since these devices are on the same monolithic chip, they also exhibit
excellent tempco tracking characteristics. They are versatile circuit elements
useful as design components for a broad range of analog applications,
such as basic building blocks for current sources, differential amplifier input
stages, transmission gates, and multiplexer applications. For most applica-
tions, connect the V- and IC pins to the most negative voltage in the sys-
tem and the V+ pin to the most positive voltage. All other pins must have
voltages within these voltage limits at all times.
The ALD110802/ALD110902 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold character-
istics and can be biased and operated in the sub-threshold region. Since
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
APPLICATIONS
? Ultra low power (nanowatt) analog and digital
circuits
? Ultra low operating voltage(<0.20V) circuits
? Sub-threshold biased and operated circuits
? Precision current mirrors and current sources
? Nano-Amp current sources
? High impedance resistor simulators
? Capacitive probes and sensor interfaces
? Differential amplifier input stages
? Discrete Voltage comparators and level shifters
? Voltage bias circuits
? Sample and Hold circuits
? Analog and digital inverters
? Charge detectors and charge integrators
? Source followers and High Impedance buffers
? Current multipliers
? Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110802
The ALD110802/ALD110902 are suitable for use in very low operating
voltage or very low power (nanowatt), precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
IC*
G N1
D N1
1
2
3
V -
M1
M2
V -
16
15
14
IC*
G N2
D N2
specified at 30pA at room temperature. For example, DC beta of the device
at a drain current of 3mA and input leakage current of 30pA at 25 ° C is =
3mA/30pA = 100,000,000.
S 12
V -
4
5
V -
V +
13
12
V +
S 34
FEATURES
? Enhancement-mode (normally off)
? Precision Gate Threshold Voltage of +0.20V
? Matched MOSFET to MOSFET characteristics
D N4
G N4
IC*
6
7
8
V -
M4
M3
V -
11
10
9
D N3
G N3
IC*
? Tight lot to lot parametric control
? Low input capacitance
? V GS(th) match (V OS ) to 10mV
? High input impedance — 10 12 ? typical
SCL, PCL PACKAGES
ALD110902
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
? Low input and output leakage currents
IC*
1
V-
V-
8
IC*
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0 ° C to +70 ° C 0 ° C to +70 ° C
G N1
D N1
S 12
2
3
4
M1
M2
V-
7
6
5
G N2
D N2
V-
16-Pin
16-Pin
8-Pin
8-Pin
SOIC
Package
Plastic Dip
Package
SOIC
Package
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
ALD110802SCL ALD110802PCL
ALD110902SAL ALD110902PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
Rev 2.1 ?2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD110904 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110904PA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110904PAL | 功能描述:MOSFET Dual N-Channel EPAD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110904SA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110904SAL | 功能描述:MOSFET Dual N-Channel EPAD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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