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| 型号： | ALD111933MAL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 10.6V 8MSOP |
| 标准包装： | 50 |
| 系列： | EPAD® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10.6V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.9mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5.9V |
| Id 时的 Vgs(th)（最大）： | 3.35V @ 1µA |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 管件 |
| 其它名称： | 1014-1050 |
e
EPAD
LE
AB
A DVANCED
L INEAR
D EVICES, I NC.
DUAL N-CHANNEL ENHANCEMENT MODE EPAD?
MATCHED PAIR MOSFET ARRAY
TM
?
D
E N
ALD111933
V GS(th) = +3.3V
GENERAL DESCRIPTION
ALD111933 are monolithic dual N-Channel MOSFETs matched at the
factory using ALD’s proven EPAD? CMOS technology. These devices are
intended for low voltage, small signal applications.
ALD111933 MOSFETs are designed and built with exceptional device
electrical characteristics matching. Since these devices are on the same
monolithic chip, they also exhibit excellent tempco tracking characteris-
tics. Each device is versatile as a circuit element and is a useful design
component for a broad range of analog applications. They are basic build-
ing blocks for current sources, differential amplifier input stages, transmis-
sion gates, and multiplexer applications. For most applications, connect
V- and N/C pins to the most negative voltage potential in the system. All
other pins must have voltages within these voltage limits.
The ALD111933 devices are built for minimum offset voltage and differen-
tial thermal response, and they are designed for switching and amplifying
applications in +3.0V to +10V systems where low input bias current, low
input capacitance and fast switching speed are desired. Since these are
MOSFET devices, they feature very large (almost infinite) current gain in
a low frequency, or near DC, operating environment.
The ALD111933 are suitable for use in precision applications which re-
quire very high current gain, beta, such as current mirrors and current
sources. The high input impedance and the high DC current gain of the
Field Effect Transistors result in extremely low current loss through the
control gate. The DC current gain is limited by the gate input leakage
current, which is specified at 30pA at room temperature. For example, DC
APPLICATIONS
? Precision current mirrors
? Precision current sources
? Voltage choppers
? Differential amplifier input stages
? Discrete voltage comparators
? Voltage bias circuits
? Sample and Hold circuits
? Analog inverters
? Level shifters
? Source followers and buffers
? Current multipliers
? Discrete analog multiplexers/matrices
? Discrete analog switches
? Low current voltage clamps
? Voltage detectors
? Capacitive probes
? Sensor interfaces
? Peak detectors
? Level shifters
? Multiple preset voltage hysteresis circuits
(with other VGS(th) EPAD MOSFETS)
? Energy harvesting circuits
? Zero standby power voltage monitors
PIN CONFIGURATION
beta of the device at a drain current of 3mA and input leakage current of
30pA at 25 ° C is = 3mA/30pA = 100,000,000.
ALD111933
FEATURES
V-
? Enhancement-mode (normally off)
? Standard Gate Threshold Voltages: +3.3V
? Matched MOSFET to MOSFET characteristics
? Tight lot to lot parametric control
N/C*
G N1
1
2
8
7
G N2
D N2
? Parallel connection of MOSFETs to increase drain currents
? Low input capacitance
? V GS(th) match to 20mV
? High input impedance — 10 12 ? typical
? Positive, zero, and negative V GS(th) temperature coefficient
? DC current gain >10 8
D N1
S N1
3
4
V-
6
5
V-
S N2
? Low input and output leakage currents
MA, PA, SA PACKAGES
ORDERING INFORMATION (“L”suffix for lead free version)
Operating Temperature Range*
0 ° C to +70 ° C
*N/C pin is internally connected.
Connect to V- to reduce noise
8-Pin
Plastic Dip
Package
ALD111933PAL
8-Pin
MSOP
Package
ALD111933MAL
8-Pin
SOIC
Package
ALD111933SAL
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
? 2006 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD111933PAL | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD111933SAL | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD112 | 功能描述:通用继电器 3A 12VDC SPST PCB RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: |
| ALD-112 | 制造商:Panasonic 功能描述:Bulk 制造商:Panasonic 功能描述:Electromechanical Relay SPST-NO 3A 12VDC 720Ohm Through Hole |
| ALD1121E | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
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